Tanaka Kikinzoku Kogyo K.k.

Tohoku University

Kim Kong Tham

Toshiya Yamamoto

Shin Saito

Ryousuke Kushibiki

Shintaro Hinata

Migaku Takahashi

Masahiro Aono

Yasunobu Watanabe

A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cmor more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.

In-plane magnetized film, in-plane magnetized film multilayer structure, hard bias layer, magnetoresistive element, and sputtering target

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has BO, and the sputtering target comprises 10 to 50 vol % of the oxide.

Sputtering target

A sputtering target for magnetic recording media capable of producing a magnetic thin film in which the magnetic crystal grains are micronized and the distance between the centers of the grains is reduced while good magnetic properties are maintained. The target including metallic Pt and an oxide, with the balance being metallic Co and inevitable impurities, wherein the Co is contained in a range of 70 at % to 90 at % and the Pt is contained in a range of 10 at % to 30 at % relative to a total of metallic components in the sputtering target for magnetic recording media, the oxide is contained in a range of 26 vol % to 40 vol % relative to a total volume of the sputtering target for magnetic recording media, and the oxide is composed of BOand one or more high-melting-point oxides having a melting point of 1470&#xb0; C. or higher and 2800&#xb0; C. or lower.

Sputtering target for magnetic recording media

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc and a process for production thereof. The sputtering target is a sputtering target comprising metallic Co, metallic Pt, and an oxide, wherein the sputtering target does not contain metallic Cr, and the oxide is WOand wherein the sputtering target comprises 25 to 50 at % of metallic Co relative to a total of metallic Co and metallic Pt.

Growing community of inventors

Tsukuba, Japan

Kim Kong Tham