Phison Electronics Corporation

Kim-Hon Wong

Wei Hung Lin

Chun-Yen Chang

Kuo-Yi Cheng

Khein-Seng Pua

Jiunn-Yeong Yang

Hao-Zhi Lee

Hung-Chun Lin

Ying-Chi Lin

A data writing method for writing data into a physical erasing unit and a memory controller and a memory storage apparatus using the data writing method are provided. The method includes dividing the data into a plurality of information frames in a unit of one physical programming unit. The method also includes writing the information frames in sequence into at least one physical programming unit constituted by memory cells disposed on at least one first word line and programming the storage state of memory cells disposed on at least one second word line following the first word line to an auxiliary pattern. Accordingly, the method effectively prevents data stored in the physical erasing unit, which is not full of data, from being lost due to a high temperature.

Data writing method, memory controller and memory storage apparatus

A data management method, a memory controller and an embedded memory storage apparatus are provided. The embedded memory storage apparatus has a plurality of physical blocks and each of the physical blocks has fast physical pages and slow physical pages. The method includes detecting a status of a state indication unit. The method further includes automatically reading data stored in the embedded memory storage apparatus, using the fast and slow physical pages of the embedded memory storage apparatus to re-store the data and marking status of the state indication unit as a second status when the status of the state indication unit is a first status. Accordingly, the storage space of the embedded memory storage apparatus can be efficiently used.

Data management method, memory controller and embedded memory storage apparatus using the same

A memory management method for a rewritable non-volatile memory module including a plurality of physical unit groups is provided, and each physical unit group includes first physical units. The method includes: grouping the physical unit groups into a first and second areas, setting the physical unit groups of the first area in a first program mode indicating that all physical units are programmable, and setting the physical unit groups of the second area in a second program mode indicating that only the first physical units are programmable. The method also includes: when a physical unit group in the first area is damaged, transforming a physical unit group from the first program mode to the second program mode and the physical unit group is unable to be set back in the first program mode. Accordingly, the lifespan of the rewritable non-volatile memory module is increased.

Memory management method, and memory controller and memory storage device using the same

Growing community of inventors

Hsinchu County, Taiwan

Kim-Hon Wong