Center for Advanced Soft Electronics

Postech Academy-industry Foundation

Postech Foundation

Samsung Electronics Co., Ltd.

Center for Advance Soft Electronics

Kilwon Cho

Boseok Kang

Hyo Chan Lee

Yoonyoung Chung

Sungjune Jung

Jimin Kwon

Haena Kim

Min Seok Yoo

Hyun Ho Kim

Yeong Suk Choi

Myungsun Sim

Sang Kyu Kwak

Soo-Ghang Ihn

Jongchan Lee

Do Hwan Kim

Jae Joon Kim

Heung Gyu Kim

Jae Young Lee

Jeongho Cho

Sae Byeok Jo

Siyoung Lee

Moonjeong Jang

Joon Hak Oh

Eun Ho Lee

Hyojin Bong

Seong Kyu Lee

Seon Baek Lee

Sujeong Kyung

Geunyeol Bae

Sanghoon Baek

Jinsung Kim

Proposed is a vibration sensor including: a substrate; a first electrode positioned on the substrate; a support positioned on the first electrode and including a cylindrical hollow hole; and a diaphragm including a thin film positioned on the support and a second electrode positioned on the thin film. According to the present disclosure, it is possible to manufacture a skin-attachable vibration sensor that is attached to a user's neck to detect vibration acceleration in user's neck skin, thus exhibiting a uniform and high sensitivity to a user's voice over the frequency range of the human voice. In addition, the sensor sensitively detects a user's voice through neck skin vibrations rather than through air, thus being free from the influence of external noise or wind, and can recognize the user's voice even in a situation where a user's mouth is covered.

Attachable vibration sensor and method for manufacturing same

Disclosed is a method of synthesizing graphene, wherein a Cu&#x2014;Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu&#x2014;Ni thin film laminate

Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (&#x2014;OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (&#x2014;OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

Method of manufacturing surface-modified polymer film and method of fabricating organic electronic device comprising the same

Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

Thin-film transistor-based pressure sensor and method of manufacturing same

Disclosed is a graphene laminate including a first graphene layer, containing an electron-donating functional group, and a second graphene layer, disposed on the first graphene layer and configured to include graphene, wherein the second graphene layer is n-doped with the first graphene layer. Thereby, graphene is doped with amino-group-modified graphene, thus preventing the transparency of graphene from decreasing, and the extent of doping of graphene can be adjusted, and the doping effect can last a long time even without any protective layer.

Graphene laminate and preparation method therefor

Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

Multilayer graphene using chemical vapor deposition and method of manufacturing same

Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor layer being electrically connected to each other, and at least one electrode of the second transistor layer and at least one electrode of the third transistor layer being electrically connected to each other. Thereby, the static RAM core cell is configured such that organic transistors of the same type are arranged in the same plane and are vertically stacked, thus omitting a complicated patterning process for forming organic transistors of different types upon fabrication of a memory element, and also reducing the area occupied by the memory element to thereby increase the degree of integration of semiconductor circuits.

3D static RAM core cell having vertically stacked structure, and static RAM core cell assembly comprising same

Disclosed is a method of manufacturing an organic semiconductor thin film, including preparing semiconductor ink containing a solvent, a low-molecular-weight organic semiconductor and a high-molecular-weight organic semiconductor and forming an organic semiconductor thin film vertically phase-separated by applying the semiconductor ink on a substrate through a bar-coating process using a bar. In the bar-coating process of the invention, the semiconductor ink blend is used, and the gap between the substrate and the bar is adjusted, thus controlling vertical phase separation. Also, the speed of the bar, the gap of which is adjusted, is regulated, thus controlling crystal growth, whereby the uniformity of the thin film is improved and thus a high-quality organic semiconductor crystalline thin film having a large area can be manufactured in a continuous process. Also, a flexible organic semiconductor transistor, having high stability and high charge mobility, can be provided using the organic semiconductor thin film.

Method of manufacturing organic semiconductor thin film using bar-coating process and method of fabricating flexible organic semiconductor transistor comprising the same

Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device.

Nanopatch graphene composite

A method of manufacturing graphene, including forming a metal catalytic layer on a substrate (Step a), providing a cover member on the metal catalytic layer of Step a (Step b), and growing graphene on the metal catalytic layer of Step b by performing chemical vapor deposition (Step c), whereby the size of the micro-scale grain boundary on the surface of the metal catalyst can be reduced by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing the evaporation of the metal catalyst due to the effect of the cover member, ultimately improving the quality of synthesized graphene, including the transparency thereof. Also, a graphene sheet can be grown under various concentrations of carbon source gas, and efficient mass production thereof is possible in a chemical vapor deposition device having a confined space.

Method for manufacturing graphene using cover member and method for manufacturing electronic element including same

Disclosed is a method of producing graphene, which includes bringing a metal catalyst into contact with hydrogen gas (Step a), bringing the metal catalyst in Step a into contact with at least one selected from among a hydrocarbon gas, nitrogen gas, and an inert gas (Step b), and forming graphene on the metal catalyst by bringing the metal catalyst in Step b into contact with hydrogen gas and a hydrocarbon gas (Step c), whereby the number of layers of graphene can be variously controlled as needed, regardless of the initial surface roughness of a metal catalyst layer, and also, the time required to form graphene can be shortened, thus reducing processing costs.

Method for producing graphene with controlled number of layers, and method for manufacturing electronic device using same

Disclosed herein is a laminate comprising: a substrate; an organic surface modifying layer disposed on the substrate; and a porous organic semiconductor layer disposed on the surface modifying layer. Onto the substrate, introduction of the organic surface modifying layer having a low surface energy, and optionally the organic intermediate layer having a low glass transition temperature controls the self assembly of the organic semiconductor layer, allowing the porous organic semiconductor layer to have high crystallinity and large crystal grains. Also, provided is a highly efficient chemical sensor comprising the laminate.

Laminate having porous organic semicoductor thin film and chemical sensor comprising same

Disclosed is a flexible electronic device having an adhesive function, including an adhesive tape that includes a flexible film and an adhesive layer formed on one side of the flexible film, and an electronic device formed on a remaining side of the flexible film of the adhesive tape. Accordingly, the flexible electronic device of the present invention is transferred on a surface of various flexible materials or materials having a curved surface so as to freely adhere and minimize breakage of the electronic device and maintain performance over a long period of time, even if the substrate is modified or repeatedly bent.

Flexible electronic device having adhesive function and method of manufacturing the same

A solar cell includes a first electrode, a second electrode facing the first electrode, a photoactive layer between the first electrode and the second electrode and including an electron donor and an electron acceptor, and a partially oxidized metal thin film between the first electrode and the photoactive layer.

Solar cell and method for manufacturing the same

A high quality single-crystalline polyalkylthiophene structure can be easily prepared by the inventive method which comprises: (i) dissolving polyalkylthiophene in an organic solvent at a temperature ranging from 50 to 100&#xb0; C., sequentially quenching the polyalkylthiophene solution at a temperature ranging from 25 to 40&#xb0; C. and then at &#x2212;5 to 15&#xb0; C., to obtain a self-seeding polyalkylthiophene solution; and (ii) applying the self-seeding polyalkylthiophene solution obtained in step (i) to one surface of a nano-template having a hydrophobic supramolecule coating layer formed thereon to induce self-assembly and crystallization of polyalkylthiophene on the surface.

Growing community of inventors

Pohang-si, South Korea

Kilwon Cho