Postech Academy-industry Foundation

Samsung Display Co., Ltd.

Kil Won Cho

Wi Hyoung Lee

Hyun Min Cho

Yu-Gwang Jeong

Tae Sung Kim

Sang Gab Kim

Su Bin Bae

Jin Seock Kim

Sang Gyun Kim

Hyo Min Ko

Hansol Lee

Jung Ah Lim

Long Zhen Qiu

Hwa Sung Lee

Ji Hwang Lee

Yeong Don Park

An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Display device and manufacturing method thereof

Disclosed is a method of manufacturing a multilayered thin film including a crystalline small molecular organic semiconductor layer and an insulating polymer layer for use in an organic thin film transistor through phase separation and annealing. The method includes applying a blend solution of organic semiconductor and insulating polymer on a substrate thus forming a vertically phase-separated thin film, which is then annealed so that the organic semiconductor contained in the insulating polymer layer is crystallized while being transferred to the surface layer. A high-performance organic thin film transistor fabricated using the same is also provided. The multilayered thin film in which the crystalline organic semiconductor layer is located on the insulating polymer layer through transfer and crystallization of the organic semiconductor can be used to fabricate the high-performance organic thin film transistor.

Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same

Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor. The insulating polymer acts as a protective layer of the organic thin film transistor, thus obviating a need for forming the protective layer.

Method of manufacturing organic semiconductor nanofibrillar network dispersed in insulating polymer using a blend of organic semiconductor/insulating polymer and organic thin film transistor using the same

The present invention provides ink-jet printing ink for organic semiconductors, and, more particularly, provides ink-jet printing ink for organic semiconductors, which can be used to form a uniform crystalline thin film. The ink-jet printing ink of the present invention includes a mixed solvent composed of a first solvent and a second solvent having a higher boiling point and lower surface tension than the first solvent, thus forming a uniform crystalline thin film in a volatilization process. Further, the present invention provides a circular organic thin film transistor having a high field-effect mobility of about 0.12 cmVS.

Ink-jet print ink and organic thin film transistor using thereof

Growing community of inventors

Pohang-si, South Korea

Kil Won Cho