Samsung Electronics Co., Ltd.

Seoul National University

Kil Ho Lee

Gwan Hyeob Koh

Woo Jin Kim

Jun Hoe Kim

Sang Koog Kim

Il Gyu Kim

Yong Kim

Kyung Hwan Lee

Young Jun Cho

Min-Sun Keel

Jung Hyuk Lee

Hoon Joo Na

Sang Kil Lee

Kwang Seok Kim

Kang Ho Lee

Dae Shik Kim

Shin Hee Han

Yoon Jong Song

Jae Hak Yang

A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.

Semiconductor memory device comprising magnetic tunnel junctions

An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

Image sensor

A signal transferring device includes a first structure that includes a first magnetic thin film structure having a first magnetic vortex configured to receive a signal as an input signal, a second structure that is spaced apart from at least one side of the first structure, the second structure including a second magnetic thin film structure having a second magnetic vortex configured to transfer the signal, and a third structure that is spaced apart from at least one side of the second structure, the third structure including a third magnetic thin film structure having a third magnetic vortex configured to output the signal from the signal transferring device. The first and third structures have a symmetrical shape and the second structure has an asymmetrical shape.

Signal transferring device and multiplexer using magnetic thin film structures

A core magnetization reversal method includes transforming the first magnetic skyrmion into a skyrmionium by applying a first alternating current (AC) magnetic field to the first magnetic skyrmion, and then transforming the skyrmionium into a second magnetic skyrmion by applying a second AC magnetic field to the skyrmionium. The first magnetic skyrmion may be formed on a hemispherical shell, which may be formed by (i) preparing a membrane having a plurality of protrusions, and (ii) stacking, on the membrane, a first layer including at least one of platinum (Pt), nickel (Ni), and palladium (Pd), and a second layer including a ferromagnetic material. The first and second AC magnetic fields may have different frequencies.

Core magnetization reversal method of skyrmion and data storage device using the method

A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

Semiconductor devices including spin-orbit torque line and contact plug

Growing community of inventors

Hwaseong-si, South Korea

Kil Ho Lee