Sumitomo Electric Industries, Limited

Japan Pionics Co., Ltd.

Kikurou Takemoto

Akinori Koukitu

Yoshiki Miura

Hisashi Seki

Masato Matsushima

Katsushi Akita

Kensaku Motoki

Yoshinao Kumagai

Fumitaka Sato

Mitsuru Shimazu

Kenji Otsuka

Hideki Matsubara

Naoki Muranaga

Shigenori Takagishi

Keiichiro Fujita

A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (), such as a ()-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (). Next, gaseous iron compound Gfrom a source () for an iron compound, such as ferrocene, and hydrogen chloride gas G1from a hydrogen chloride source () are caused to react with each other in a mixing container () to generate gas Gof an iron-containing reaction product, such as iron chloride (FeCl). In association with the generation, the iron-containing reaction product G, first substance gas Gcontaining elemental nitrogen from a nitrogen source (), and second substance gas Gcontaining elemental gallium are supplied to a reaction tube () to form iron-doped gallium nitride () on the substrate ().

Gallium nitride baseplate and epitaxial substrate

A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus. Next, gaseous iron compound Gfrom a sourcefor an iron compound, such as ferrocene, and hydrogen chloride gas G1from a hydrogen chloride sourceare caused to react with each other in a mixing containerto generate gas Gof an iron-containing reaction product, such as iron chloride (FeCl). In association with the generation, the iron-containing reaction product G, first substance gas Gcontaining elemental nitrogen from a nitrogen source, and second substance gas Gcontaining elemental gallium are supplied to a reaction tubeto form iron-doped gallium nitrideon the substrate

Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride

There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas

The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.

Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate

Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.

Epitaxial wafer and method of preparing the same

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Hyogo, Japan

Kikurou Takemoto