Renesas Electronics Corporation

Kikuo Kato

Takahiro Yashita

Kazuaki Kubo

Kazuyoshi Takai

Tetsuya Nitta

Yasuki Yoshihisa

Kazuma Onishi

There is provided a semiconductor device capable of suppressing malfunction of an element to be protected, caused by electrons from an output element into a semiconductor substrate. The semiconductor device is provided with the semiconductor substrate, the output element, the element to be protected, a tap part, and a first active-barrier structure. The first active-barrier structure is disposed between the element to be protected and the tap part. Further, the first active-barrier structure includes an n-type region joined with a p-type doped region, and a p-type region in ohmic coupling with the n-type region.

Semiconductor device

In a power phase period when in normal operation, switch portions SWH and SWL and switch portions SWH and SWL are turned ON, respectively, and switch portions SWH and SWL are turned OFF. And floating power supply is provided from an electrostatic capacitance element CS to buses A and B, a floating control circuit, a transmitter circuit, and a receiver circuit, respectively. In a data phase period, the switch portions SWH and SWL are turned ON, and the switch portions SWH, SWL, SWH, and SWL are turned OFF. By that manner, the electrostatic capacitance element CS is charged by the power supply of a battery B, and an electrostatic capacitance element CH provides the floating power supply to the floating control circuit, the transmitter circuit, and the receiver circuit, respectively. By this manner, a floating switch unitin which the number of the switch portions is considerably reduced can be configured.

Semiconductor integrated circuit device

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Tokyo, Japan

Kikuo Kato