Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kikuo Aida

Tatsuya Nishiwaki

Kohei Oasa

Kentaro Ichinoseki

Hung Hung

Hiroshi Matsuba

Tatsuya Ohguro

Shingo Sato

Yoshiharu Takada

Hideharu Kojima

Kenji Maeyama

According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.

Semiconductor device

A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The control electrode is provided in a trench between the semiconductor part and the second electrode. The semiconductor part includes first and second layers. Between the first layer of a first conductivity type and the second electrode, the second layer of a second conductivity type is provided. The second electrode includes first and second contact portions. The first contact portion extends into the second layer. The second contact portion contacts a surface of the semiconductor part. In the second layer, the first contact portion has a first width at a first position and a second width at a second position. The first position is positioned between the first electrode and the second position. The first width is larger than the second width.

A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g&#xb7;&#x3bc;m&#xb7;cm])/(density of the first metal material [g&#xb7;cm]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g&#xb7;&#x3bc;m&#xb7;cm])/(density of the second metal material [g&#xb7;cm]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode provided on the second solder portion.

A semiconductor device includes a semiconductor layer of a first conductivity type having first and second surfaces and an impurity concentration distribution in a first direction from the second surface to the first surface, a first semiconductor region of a second conductivity between the semiconductor layer and the first surface, a second semiconductor region of a first conductivity type between the first semiconductor region and the first surface side, a first trench extending from the first surface into the semiconductor layer, a first electrode located in the first trench over a first insulating film and spaced from the first semiconductor region by a first insulating film, a second electrode located in the first trench over a second insulating film, a second trench extending from the first surface into the semiconductor layer and surrounding the first trench, and a third electrode located in the second trench over a third insulating film.

According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate, a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies, a gate adjacent to the base layer with a gate insulating film therebetween, a source layer connected to the base layer, and a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate.

A semiconductor device has a cell which includes a first semiconductor region of a first conductive type, a base region of a second conductive type on the first semiconductor region, a source region of the first conductive type on the base region, a gate electrode penetrating through the base region in a first direction to reach the first semiconductor region and extending in a second direction, and a gate insulting film between the gate electrode and the first semiconductor region, between the gate electrode and the base region, and between the gate electrode and the source region. The cell has a region having a first threshold voltage and a region having a second threshold voltage higher than the first threshold voltage.

A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.

Growing community of inventors

Nomi Ishikawa, Japan

Kikuo Aida