Samsung Electronics Co., Ltd.

Kijoon Kim

Youngju Lee

Dohyuk Ha

Kwanghyun Baek

Jungyub Lee

Sangho Lee

Seungtae Ko

Juho Son

Yonghun Cheon

Junsig Kum

Jinsu Heo

Juneseok Lee

A semiconductor device is provided. The semiconductor device includes: a lower structure including bit lines; an intermediate structure including vertical channel structures and gate structures; and an upper structure including a data storage structure. A first channel structure among the vertical channel structures includes a lower portion, and first and second vertical portions extending upwardly from sides of the lower portion. The gate structures include first and second gate structures on the lower portion between the first vertical portion and the second vertical portion. The first gate structure is in contact with the first vertical portion. The second gate structure is in contact with the second vertical portion. The first channel structure includes a plurality of layers. At least one of the plurality of layers is an oxide semiconductor layer or a two-dimensional (2D) material layer having an energy band gap of about 1.2 eV or greater.

Semiconductor device including vertical channel structure

An integrated circuit device including a substrate including a word line trench and a first recess adjacent to a first side wall portion of an inner wall of the word line trench, a channel region on the inner wall and extending in a first direction parallel to an upper surface of the substrate, the channel region including a first channel region in a portion of the substrate adjacent to the inner wall and a second channel region on the inner wall and including a two-dimensional (2D) material of a first conductivity type, a gate insulating layer on the second channel region, a word line on the gate insulating layer and inside the word line trench, and a source region in a first recess and including the 2D material of the first conductivity type may be provided.

Integrated circuit devices

A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

Module comprising antenna and RF element, and base station including same

The present disclosure relates to a communication method and system for converging a 5-Generation (5G) communication system for supporting higher data rates beyond a 4-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An antenna module and a base station including the antenna module. The antenna module includes a printed circuit board in which at least one layer is stacked, a feeding unit disposed at one surface of the printed circuit board, and a first antenna spaced apart from the feeding unit by a predetermined first length.

Antenna module including printed circuit board and base station including the antenna module

Growing community of inventors

Suwon-si, South Korea

Kijoon Kim