Samsung Electronics Co., Ltd.

Kijoo Hong

Taejoong Kim

Youngkyu Park

Jongsu Kim

Juntaek Oh

Seungbeom Park

Sungha Kim

Kwangsung Lee

Min Whoa Hong

Doohyun Cho

Youngsu Ryu

Jinwoo Ahn

Seunghwa Hyun

Wansung Park

Jaeyoun Wi

Eunsoo Hwang

A wafer processing apparatus includes an X-θ stage unit having a rotary chuck capable of moving in an X direction and rotating in a θ direction, wherein a wafer is mounted on the rotary chuck and the wafer includes an edge portion adjacent to an edge of the wafer. In addition, the wafer processing apparatus includes: an edge bead removal (EBR) measurement and eccentricity measurement unit which is capable of inspecting a bead removal state of the edge portion of the wafer, and measuring eccentricity between the center of the rotary chuck and the center of the wafer; and an edge exposure of wafer (EEW) process unit which exposes the edge portion of the wafer after correcting the eccentricity between the center of the rotary chuck and the center of the wafer measured by the EBR measurement and eccentricity measurement unit.

Wafer processing apparatus

A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.

Method of inspecting a wafer and apparatus for performing the same

A thickness estimation method may include: obtaining a test spectrum image; obtaining test spectrum data; measuring a thickness of a test layer formed on the test substrate at the plurality of positions; generating a regression analysis model using a correlation between the thickness of the test layer and the test spectrum data; obtaining a spectrum image; and estimating a thickness of a target layer over the entire area of the semiconductor substrate by applying the spectrum image to the regression analysis model. The thickness corresponding to the entire area of the semiconductor substrate that is being transferred is estimated using the thickness estimation method according to an exemplary embodiment in the present disclosure, such that whether or not processing is normally performed may be examined without requiring a separate time. In addition, an examination result may be feedbacked to processing equipment to improve production yield.

Thickness estimation method and processing control method

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Seoul, South Korea

Kijoo Hong