Wolfspeed, Inc.

Kijeong Han

Sei-Hyung Ryu

Daniel Jenner Lichtenwalner

Edward Robert Van Brunt

Joohyung Kim

Thomas E Harrington, Iii

A vertical semiconductor device includes one or more of a substrate, a buffer layer over the substrate, one or more drift layers over the buffer layer, and a spreading layer over the one or more drift layers.

Vertical semiconductor device with improved ruggedness

Shielding techniques are used to provide an embedded sensor element such as a temperature sensing element on a wide bandgap power semiconductor device. A semiconductor device may include a drift layer and an embedded sensor element. The drift layer may be a wide bandgap semiconductor material. A shielding structure is provided in the drift layer below the embedded sensor element. The embedded sensor element may be provided between contacts that are in electrical contact with the shielding well. The distance between the contacts may be minimized. A noise reduction well may be provided between the contacts to further isolate the embedded sensor element from parasitic signals.

Wide bandgap semiconductor device with sensor element

A semiconductor device includes a vertical transistor and a body diode. Various improvements to the semiconductor device allow for improved performance of the body diode, in particular to reduced snappiness and increased softness.

Power transistor with soft recovery body diode

A power semiconductor device has a semiconductor layer structure that includes a silicon carbide drift region having a first conductivity type, first and second wells in the silicon carbide drift region that are doped with dopants having a second conductivity type, and a JFET region between the first and second wells. The first and second wells each include a main well and a side well that is between the main well and the JFET region, and each side well includes a respective channel region. A doping concentration of the JFET region exceeds a doping concentration of the silicon carbide drift region, and a minimum width of an upper portion of the JFET region is greater than a minimum width of a lower portion of the JFET region.

Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices

A transistor includes a substrate, a drift layer on the substrate, and a junction implant in the drift layer opposite the substrate. The junction implant includes a body well and a source well within the body well. A source contact is in electrical contact with the source well and the body well. A drain contact is in electrical contact with the substrate. A gate insulator is on the drift layer and over a portion of the body well and the source well. A gate contact is on the gate insulator. A softness of a body diode between the source contact and the drain contact is greater than 0.5. By providing the transistor such that the softness factor of the body diode is greater than 0.5, the switching performance of the body diode and thus switching losses of the transistor when used in a bidirectional conduction application will be significantly reduced.

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Apex, NC, United States of America

Kijeong Han