Sumitomo Electric Industries, Limited

Sumitomo Electric Hardmetal Corp.

Japan Fine Ceramics Center

Other

Kawasaki Jukogyo Kabushiki Kaisha

Dmg Mori Company Limited

Nagoya Institute of Technology

Mitsubishi Heavy Industries Aero Engines, Ltd.

Kiichi Meguro

Takahiro Imai

Yoshiyuki Yamamoto

Yoshiki Nishibayashi

Yuichiro Seki

Katsuhito Yoshida

Shinji Matsukawa

Yutaka Ando

Shigeru Yoshida

Takashi Matsuura

Hirohisa Saito

Yoshiji Sato

Masayuki Nishizawa

Akihiko Ueda

Keisuke Tanizaki

Makoto Yamasaki

Akihiko Namba

Fumihiro Itoigawa

Satoshi Suzuki

Yohei Oda

Junichi Tamura

Momoko Iida

Hisao Oka

Shiro Nagami

Junichi Marui

Yoshiki Nishioka

A method of measuring a concentration of nitrogen in diamond includes a first step, a second step, and a third step. In the first step, diamond is arranged in the inside of an integrating sphere. In the second step, visible light is emitted to the inside of the integrating sphere and the visible light that is reflected by an inner surface of the integrating sphere and passes through or is reflected by diamond arranged in the inside of the integrating sphere is received. In the third step, the concentration of nitrogen in diamond is calculated based on data on received visible light and a mass of diamond.

Method of measuring concentration of nitrogen in diamond and apparatus that measures concentration of nitrogen in diamond

A single-crystal diamond having a first facet plane is prepared. The single-crystal diamond is fixed to the support based on the first facet plane. An X-ray image of the single-crystal diamond is captured, the X-ray image being an X-ray image in which a crystal orientation of the single-crystal diamond is associated with an X-ray emission direction by associating the support to which the single-crystal diamond is fixed with the X-ray emission direction. A position of an inclusion of the single-crystal diamond in the single-crystal diamond is specified based on the X-ray image. It is determined whether or not a shape of the diamond tool intermediate is extractable from the single-crystal diamond with the inclusion being not included in an inclusion-excluded region. The shape of the diamond tool intermediate is extracted from the single-crystal diamond with the inclusion being not included in the inclusion-excluded region.

Method of manufacturing diamond tool intermediate and method of making determination for single-crystal diamond

A shaft portion and a blade portion provided on a side surface of the shaft portion are included, and the blade portion includes cutting blades arranged in a plurality of lines on a side surface of the shaft portion along a peripheral direction, and arranged in a plurality of stages in an extending direction of a shaft center of the shaft portion in each line. Further, the cutting blade has a radial-direction clearance angle, a tip end-side clearance angle, and a base end-side clearance angle.

Cutting tool and cutting method

The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 &#x3bc;m and not more than 10 &#x3bc;m and an average length of roughness profile elements RSm of not less than 3.1 &#x3bc;m and not more than 5.4 &#x3bc;m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.

Diamond coated tool

The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 &#x3bc;m and not more than 10 &#x3bc;m and an average length of roughness profile elements RSm of not less than 1 &#x3bc;m and not more than 100 &#x3bc;m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.

A small diameter portion having an outside diameter smaller than a diameter of the drill is formed on a front end side of a body of the drill in which a cutting edge includes at least two portions, that is, a rotation center side cutting edge portion and an outer peripheral side cutting edge portion and point angles of the respective cutting edge portions reducing gradually from the rotation center side cutting edge portion to the outer peripheral side cutting edge portion. The cutting edge with the point angles varied is formed in the small diameter portion. A flat cutting edge having an inclination angle &#x3b2; of 30&#xb0; or less with respect to a line perpendicular to an axis of the drill is provided in a step portion formed between the small diameter portion and a large diameter portion.

Drill

A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 &#x3a9;cm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50&#xb0; or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50&#xb0; or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 &#x3a9;cm or less at 300 K.

Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film

A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 &#x3bc;m is deviated by +0.5 cmor more to +3.0 cmor less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by &#x2212;1.0 cmor more to less than +0.5 cmfrom the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.

Diamond single crystal substrate

It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substratemay be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layerto create a diamond composite substrate. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.

Diamond composite substrate and process for producing the same

A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 &#x3bc;m and less than 400 &#x3bc;m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

Diamond single crystal substrate manufacturing method

The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 &#x3bc;m at maximum per a thickness of 100 &#x3bc;m across an entire of the single crystalline diamond, and also a method for producing the diamond.

Single crystalline diamond and producing method thereof

A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 &#x3bc;m of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.

Growing community of inventors

Itami, Japan

Kiichi Meguro