Sanyo Electric Co., Ltd.

Kiichi Hirano

Yoshihiro Morimoto

Kiyoshi Yoneda

Naoya Sotani

Toshifumi Yamaji

Hiroki Hamada

Nobuhiko Oda

Hisashi Abe

Eiji Taguchi

Nobuhiro Gouda

Koji Suzuki

Naoaki Komiya

Masaru Takeuchi

Akifumi Sasaki

A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

Semiconductor device, display device and method of fabricating the same

A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.

Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen

In an active matrix system, a pixel of a display apparatus includes an electroluminescence (EL) element, a diode type driving element connected in series to the EL element for driving the EL element, an added capacitor and an added resistor. The added resistor is connected in series with the added capacitor, and the added resistor and the added capacitor are connected in parallel to the EL element. The added capacitor improves a writing characteristic and a holding characteristic of the pixel, such that a high quality image can be displayed.

Display apparatus using electroluminescence elements

A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Thin film transistors for display devices having two polysilicon active layers of different thicknesses

A pixel of an organic electroluminescence (EL) display apparatus includes an EL element and an added capacitor connected in parallel with the EL element. The added capacitor provides improved image quality. To further improve image quality, an added resistor may be connected in series with the EL element, and in parallel with the added capacitor. Alternatively, the added resistor may be connected in series with the added capacitor, and in parallel with the EL element. The pixel may be used in both a simple matrix display system or an active matrix display system.

To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

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Gifu, Japan

Kiichi Hirano