Samsung Electronics Co., Ltd.

Kihyung Nam

Jaewook Kim

Keunyoung Park

Seokyeong Jung

Jinwoong Kim

Jungkeun Cho

An electronic device and method are disclosed. The electronic device includes input circuitry, a display, and a processor. The processor implements the method, including extracting at least one piece of context information based at least in part on an application screen displayed on the display, analyzing the extracted at least one piece of context information to generate a language model based on the extracted at least one piece of context information, receiving a voice input of a user through the input circuitry and convert the voice input into a text string using the generated language model, and resetting the generated language model.

Electronic device and operation method thereof

An electronic device include: a display, an input unit, at least one processor, and a memory. The input unit includes at least one biometrics sensor and the memory includes instructions. The processor is configured to perform user authentication based on biometric sensing information obtained through the at least one biometrics sensor in response to an input to the input unit. In response to successfully performing the user authentication, the processor is configured to identify whether a duration of the input exceeds a first threshold time. The processor is configured to perform a first function when the duration is less than or equal to the first threshold time. The processor is also configured to perform a second function when the duration exceeds the first threshold time.

Electronic device and method for performing biometric authentication function and intelligent agent function using user input in electronic device

A method of manufacturing a memory device is provided. The method includes the steps of forming a plurality of lower conductive lines on a substrate, forming a plurality of memory units on the plurality of lower conductive lines, forming a switch stack that defines a plurality of first lines, the plurality of first lines extending in parallel in a first direction on the plurality of memory units, forming an upper conductive layer on the switch stack, forming an etch mask that defines a plurality of second lines, the plurality of second lines extending in parallel in a second direction on the upper conductive layer, the second direction being different from the first direction, and forming a plurality of upper conductive lines and a plurality of switch units by etching the upper conductive layer and the switch stack using the etch mask.

Growing community of inventors

Suwon-si, South Korea

Kihyung Nam