Tdk Corporation

Tdk Korea Corporation

Samsung Electronics Co., Ltd.

Kiho Hwang

Hiroshi Maeda

Katsumi Kobayashi

Dougyong Sung

Nobuo Kitajima

Hyunju Lee

Sejin Oh

Terumasa Toyoda

Je-Hun Woo

Sukho Shin

Seungkyu Lim

Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

Methods of fabricating semiconductor devices including performing an atomic layer etching process

The present invention provides a coil component which is possible to be thinner with less leakage flux toward upward and downward directions, and to sustain a good insulation. The coil component comprises a core including two opposing parts mutually opposing, two side legs mutually connect both ends of the two opposing parts, and a middle leg placed between the two side legs and mutually connect central parts of the two opposing parts, a primary coil, which goes around outer circumference of the middle leg, and a secondary coil, which goes around outer circumference of the primary coil, wherein; a distance between outer perimeter edge of the primary coil and inner perimeter edge of the secondary coil varies along circumferential direction.

Coil component

A coil devicecomprises a first bobbinhaving a first bobbin plateprovided with a first hollow cylinderon which a primary coilis wound at the outer periphery, and a second bobbinmounted on the first bobbinand having a second bobbin plateprovided with a second hollow cylinderon which a secondary coilis wound at the outer periphery. A winding center Cof the primary coiland a winding center Cof the secondary coildisplace with a predetermined displacement (Lx) along a predetermined reference direction X.

Coil device

A coil devicecomprises a bobbinhaving a bobbin plateprovided with a first hollow cylinderon which a primary coilis wound, and a caseprovided with a second hollow cylinderwound by a secondary coilat the outer circumference. On the bobbin plate, a primary terminalconnecting to the primary coiland a secondary terminalconnecting to the secondary coilare formed, and a tip end portionof caseis extended to the end portion of the bobbin plateto which the secondary terminalis formed. Further, on the tip end portion, plural first groovesfor lead are formed.

Growing community of inventors

Seoul, South Korea

Kiho Hwang