Globalfoundries Singapore Pte. Ltd.

Kien Seen Daniel Chong

Qizhi Liu

Judson Robert Holt

Shyue Seng Tan

Vibhor Jain

John Joseph Pekarik

Yung Fu Chong

Xinshu Cai

Kenneth J Stein

Eng Huat Toh

Kiok Boone Elgin Quek

Ping Zheng

Jing Hua Michelle Tng

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises silicon based material; an intrinsic base; and an extrinsic base overlapping the emitter region and the intrinsic base; an extrinsic base overlapping the emitter region and the intrinsic base; and an inverted 'T' shaped spacer which separates the emitter region from the extrinsic base and the collector region from the emitter region.

Transistor with wrap-around extrinsic base

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.

Trenchless single-photon avalanche diodes

Growing community of inventors

Singapore, Singapore

Kien Seen Daniel Chong