Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kichul Park

Boun Yoon

Byoungho Kwon

Sangkyun Kim

Ki Hoon Jang

Inkwon Kim

Anthony Dongick Lee

Sangcheol Na

Youngbeom Pyon

Jinnam Kim

Hoonjoo Na

Rakhwan Kim

YoungWoo Cho

Ki-Woong Kim

KyoungWoo Lee

Hansol Seok

Yoonsuk Kim

Juyoung Jung

Timothy John Ebido

Daegil Hwang

Kyungho Jeon

Eunji Jung

Doohwan Park

Sungyup Jung

Deagil Hwang

A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.

Semiconductor device including via structure

A semiconductor device including a first insulating structure on a substrate and including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer, a second insulating structure on the first insulating structure and including a second etch stop layer and a second interlayer insulating layer on the second etch stop layer, a conductive line penetrating through the second insulating structure, and extending in a first direction parallel to an upper surface of the substrate, and a plurality of contacts penetrating through the first insulating structure and connected to the conductive line may be provided. The conductive line may include a protrusion extending below the second insulating structure and penetrating through the first interlayer insulating layer to be in contact with the first etch stop layer.

Semiconductor devices

An electronic device includes a memory storing a first data set comprising a first plurality of files; a communicator comprising circuitry; and a processor configured to: identify an amount of files having a size less than a first threshold value among the first plurality of files; based on the identified amount of files and a communication state with a server, determine a size of a unit file to be transmitted to the server; convert the identified files having the size less than the first threshold value into the determined size unit, and generate metadata for the first data set while converting the identified files; and control the communicator to transmit the first data set including the converted files and the metadata for the first data set to the server.

Electronic device for transmitting data set to server and control method therefor

A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

Method of fabricating semiconductor device

A semiconductor memory device may include a selection transistor on a semiconductor substrate, an interlayered insulating layer covering the selection transistor, a lower contact plug coupled to a drain region of the selection transistor and configured to penetrate the interlayered insulating layer, and a magnetic tunnel junction pattern coupled to the lower contact plug. The lower contact plug may include a metal pattern and a capping metal pattern in contact with a top surface of the metal pattern. The capping metal pattern may include a top surface having a surface roughness that is smaller than a surface roughness of the top surface of the metal pattern. The magnetic tunnel junction pattern may include bottom and top electrodes, a lower magnetic layer and an upper magnetic layer between the top and bottom electrodes, and a tunnel barrier layer between the lower magnetic layer and the upper magnetic layer.

Semiconductor memory devices

Semiconductor device and method of fabricating the same

The present invention relates to an exhaust system hanger of a vehicle, in which two protrusions facing and spaced apart from each other are integrally formed at a center portion between both distal ends of the hanger, and the two protrusions selectively contact each other to increase a spring constant, when the shape of the hanger is elastically deformed by external force beyond a predetermined elastic value.

Exhaust system hanger of vehicle

A muffler for a vehicle includes a plurality of baffles fixed at a predetermined distance in a longitudinal direction of a muffler housing, an exhaust gas inflow pipe, an intermediate pipe, and a plurality of exhaust gas outflow pipes having an inlet thereof positioned in the same chamber defined by the adjacent pair of the baffles with the outlet of the intermediate pipe to considerably reduce exhaust noise, flow-induced noise, and booming noise of exhaust gas. The muffler is effectively protected from thermal damage of a vehicle by implementing a sound-absorbing heat-insulating material therein, and impresses consumers with dynamic, powerful, and polished image by making the exhaust gas outflow pipe in a dual type composed of first and second exhaust gas outflow pipes and disposing the outlet at the lower center of a rear bumper to be exposed to the outside, thereby considerably improving productivity of vehicles.

Muffler for vehicle

A muffler for a vehicle may include a plurality of baffles to form a plurality of chambers, an exhaust gas inflow pipe having an outlet connected to one of the chambers inside the muffler housing through the baffles, an intermediate pipe disposed in parallel with the exhaust gas inflow pipe in the muffler housing through the baffles to fluid connect at least two chambers and a plurality of exhaust gas outflow pipes having an inlet positioned with an outlet of the intermediate pipe in any one chamber divided by the baffles and an outlet protruding outward through the muffler housing, without passing through the baffles, such that the exhaust gas passing through the intermediated pipe may be discharged outside the muffler housing.

Growing community of inventors

Suwon-si, South Korea

Kichul Park