Growing community of inventors

Seoul, South Korea

Kibum Kim

Average Co-Inventor Count = 3.33

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 2

Kibum KimHyeonjin Shin (5 patents)Kibum KimSanghun Lee (4 patents)Kibum KimKeunwook Shin (3 patents)Kibum KimSeongjun Park (2 patents)Kibum KimHyunjae Song (2 patents)Kibum KimMinhyun Lee (2 patents)Kibum KimYunho Kang (2 patents)Kibum KimHyunmi Kim (2 patents)Kibum KimJinsu Kim (1 patent)Kibum KimKyung-Eun Byun (1 patent)Kibum KimChangseok Lee (1 patent)Kibum KimMinhyun Lee (1 patent)Kibum KimSeokjoon Park (1 patent)Kibum KimHakjoon Kim (1 patent)Kibum KimKibum Kim (7 patents)Hyeonjin ShinHyeonjin Shin (169 patents)Sanghun LeeSanghun Lee (85 patents)Keunwook ShinKeunwook Shin (43 patents)Seongjun ParkSeongjun Park (83 patents)Hyunjae SongHyunjae Song (37 patents)Minhyun LeeMinhyun Lee (30 patents)Yunho KangYunho Kang (2 patents)Hyunmi KimHyunmi Kim (2 patents)Jinsu KimJinsu Kim (69 patents)Kyung-Eun ByunKyung-Eun Byun (54 patents)Changseok LeeChangseok Lee (45 patents)Minhyun LeeMinhyun Lee (22 patents)Seokjoon ParkSeokjoon Park (3 patents)Hakjoon KimHakjoon Kim (3 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Samsung Electronics Co., Ltd. (7 from 131,214 patents)

2. Seoul National University (4 from 1,557 patents)


7 patents:

1. 12477270 - Electronic device including speaker

2. 12378120 - Wiring including graphene layer and method of manufacturing the same

3. 12014991 - Interconnect structure including graphene-metal barrier and method of manufacturing the same

4. 11556914 - Electronic device and method for making payment by using audio module

5. 11508664 - Interconnect structure including graphene-metal barrier and method of manufacturing the same

6. 11329223 - Nonvolatile memory apparatus including resistive-change material layer

7. 10811604 - Nonvolatile memory apparatus including resistive-change material layer

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as of
12/5/2025
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