Cornell University

Kibum Kang

Jiwoong Park

Saien Xie

Hui Gao

Daniel C Ralph

Kan-Heng Lee

Marcos H D Guimaraes

Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.

Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same

Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.

Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same

Metal-chalcogenide films disposed on a substrate comprising at least one monolayer (e.g., 1 to 10 monolayers) of a metal-chalcogenide. The films can be continuous (e.g., structurally and/or electrically continuous) over 80% or greater of the substrate that is covered by the film. The films can be made by methods based on low metal precursor concentration relative to the concentration of chalcogenide precursor. The methods can be carried out at low water concentration. The films can be used in devices (e.g., electrical devices and electronic devices).

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Kibum Kang