Electronics and Telecommunications Research Institute

Kibong Song

Doo-Hee Cho

Sang Su Lee

Yong Ju Yun

Moon Youn Jung

Sung Q Lee

Kang Ho Park

Jeong Dae Suh

Eunkyoung Kim

Jun Ho Kim

Keongam Kim

Seungkyoung Yang

Sangsu Lee

Chang-Beom Kim

Kwang-Yong Kim

Kyeongam Kim

Kwan Su Kim

JungWoo Park

Provided is a pupil tracking device, which measures a pupil center position of an eye moving according to an optokinetic reflex, and a proximity depth between a pupil and an object, the pupil tracking device including a light source configured to output infrared light, a display configured to output object light, a waveguide configured to guide the infrared light and the object light towards a direction to the pupil, a film configured to separate the infrared reflected by a cornea of the eye into a plurality of light beams, and an optical pickup configured to detect the plurality of light beams and measure the pupil center position and the proximity depth.

Pupil tracking device and pupil tracking method for measuring pupil center position and proximity depth between object and pupil moving by optokinetic reflex

Provided is a method for diagnosing Alzheimer/s disease using a decomposed biomaterial. The method includes: preparing magnetic particles on which primary capture antibodies specifically bound to beta-amyloid are adsorbed; decomposing a biomaterial including beta-amyloid; binding the beta-amyloid to the primary capture antibodies; binding secondary capture antibodies labeled with a fluorescent material to the magnetic particles bound to the beta-amyloid to form a complex; disposing the complex in a channel region of a photo field effect transistor in which a photocurrent is changed according to the amount of incident light; and measuring the photocurrent changed by light excited from the complex to quantify the concentration of the beta-amyloid existing in the biomaterial.

Method for diagnosing Alzheimer's disease using biomaterial

Provided are an analysis device and an analysis method. According to the device and the method, a giant magnetoresistance (GMR) sensor unit is formed to be the same as the size of one cancer cell or smaller and magnetic resistance according to the number of magnetic nano particles coupled with the one cancer cell by using the GMR sensor unit, thereby not only diagnosing cancer but also simply and cheaply distinguishing the type of the cancer.

Analysis device and analysis method using the same

Provided is a solar cell including a first electrode, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, and a second electrode on the second semiconductor layer. The second semiconductor layer may include a nano wire that may be formed along a grain boundary of a top surface thereof to have a mesh-shaped structure.

Solar cell and method of fabricating the same

A graphene electronic device includes a substrate, a first electrode and a second electrode provided on the substrate and spaced apart from each other, and graphene channels connecting the first electrode with the second electrode. Each of the graphene channels is separated from the substrate to have a cylindrical structure.

Electronic device having graphene channels

A method of manufacturing a graphene oxide composite fiber includes forming a supporting fiber having positive charges thereon; forming a solution containing graphene oxide having a negative charge thereon to provide a graphene oxide-containing solution; coating the supporting fiber with the graphene oxide-containing solution; and permitting self-assembly of the graphene oxide of the graphene oxide -containing solution and the supporting fiber by an attraction between the positive and negative charges to form the graphene oxide composite fiber. The method may include coating the supporting fiber with a solution containing a material having an amine group to provide a positive surface charge on the supporting fiber. The method may include reducing the graphene oxide composite fiber to a graphene composite fiber, such as by one of a thermal reduction method, an optical reduction method, and a chemical reduction method. Large-area graphene fiber structures having high strength, flexibility, and porosity are enabled.

Method of manufacturing a graphene fiber

A method of fabricating a graphene electronic device includes (a) forming a first electrode and a second electrode spaced apart from each other, on a substrate; (b) forming supporting patterns on the first electrode and the second electrode; (c) coating the supporting patterns with graphene-oxide-containing solution to form composite patterns; and (d) separating the supporting patterns from the composite patterns. The step of forming supporting patterns may expose end portions of the first and second electrodes and the substrate between the end portions and be accomplished by providing a mask on the first and second electrodes; and electrospinning a polymer solution on the first and second electrodes with the mask. The supporting patterns may be composed of polymer fibers.

Method of fabricating a graphene electronic device

Provided is a thin film transistor (TFT) which uses CIS (CuInSe), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.

Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same

The present invention provides a doped homojunction chalcogenide thin film transistor and a method of fabricating the same, comprising forming an N-type chalcogenide layer constituting a channel layer on a substrate, forming and patterning a diffusion prevention layer on the upper part of the N-type chalcogenide layer, and forming a P-type chalcogenide layer constituting source and drain regions by depositing and diffusing Te alloy on the N-type chalcogenide layer. With the present invention, a thin film transistor can be fabricated using chalcogenide material having N-type conductivity and chalcogenide material having P-type conductivity.

Method for manufacturing N-type and P-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same

Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same

Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY' where A is a Group 11 element, X is a Group 15 element, and Y and Y&#x2032; are Group 16 elements in which Y and Y&#x2032; can be identical to or different from each other.

Optoconductive compound and method of producing the same

Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.

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Daejeon, South Korea

Kibong Song