Chartered Semiconductor Manufacturing Ltd (corporation)

Nanyang Technological University

Globalfoundries Singapore Pte. Ltd.

Agency for Science, Technology and Research

Kiat Seng Yeo

Manh Anh Do

Kok Wai Johnny Chew

Kai Xue Ma

Hai Peng Tan

Kok Wai Chew

Jian Guo Ma

Lap Chan

Suh Fei Lim

Cheng Yeow Ng

Choon-Beng Sia

Shao-fu Sanford Chu

Wang Ling Goh

Yang Lu

Johnny Kok Wai Chew

Chee Chong Lim

Jiangmin Gu

Jianguo Ma

Shouxian Mou

Alex See

Chirn Chye Boon

Jian-guo Ma

Kaixue Ma

Ping Qiu

Nagarajan Mahalingam

Shou Xian Mou

Hai Peng Ian

Jiangud Ma

Toe Naing Swe

Jiang Guo Ma

Kok Meng Lim

Keping Wang

Hai Yeng Tan

According to embodiments of the present invention, a switching circuit is provided. The switching circuit includes a transmission line arrangement including a plurality of transmission lines coupled to each other, and at least one switching element arrangement coupled to at least one transmission line of the plurality of transmission lines, wherein, in a first mode of operation, the at least one switching element arrangement is configured in a first state, wherein, in a second mode of operation, the at least one switching element arrangement is configured in a second state, and wherein the transmission line arrangement is configured to, depending on whether the at least one switching element arrangement is configured in the first state or the second state, generate a standing wave from an input signal received by the transmission line arrangement for coupling into an output signal, wherein the output signal is transmitted from the transmission line arrangement.

Switching circuit

According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end connected to the transmission line or inductor and a second end connected to ground.

Miniature passive structures, high frequency electrostatic discharge protection networks, and high frequency electrostatic discharge protection schemes

A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port 'T' transmission line junction and a perturbing element. The three-port 'T' transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port &#x201c;T&#x201d; transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end. A second one of the second set of filter coupled elements includes an output transmission line and has a first end thereof coupled to an output port and an opposite end thereof having an open end.

Multiple-mode filter for radio frequency integrated circuits

A miniature passive structure for electrostatic discharge (ESD) protection and input/output (I/O) matching for a high frequency integrated circuit is provided. The miniature passive structure includes at least one shunt stub and at least one load line. The shunt stub(s) each provide a corresponding ESD discharge path. The load line(s) are coupled to the shunt stub(s) and provide loading effects for the shunt stub(s).

Miniature passive structures for ESD protection and input and output matching

An integrated circuit for a radio frequency (RF) circuit such as a voltage controlled oscillator or an injection locked frequency divider is provided. The integrated circuit architecture includes a primary LC tank circuit comprising a first inductor and a first capacitive device connected in parallel and one or more secondary LC tank circuits, each comprising an inductor and a capacitive device connected in parallel. Each of the one or more secondary LC tank circuits is strongly coupled to the primary LC tank circuit and to each other either electrically, magnetically or a combination of electrically and magnetically.

Integrated circuit architecture with strongly coupled LC tanks

A low pass filter circuit () structure is provided. The low pass filter circuit structure includes first and second dominant inductor ()s, a first capacitor () and first and second shunt capacitors (). The first dominant inductor has a first end and a second end and the second dominant inductor has a first end and a second end. The second end of the first dominant inductor is electrically connected to the second end of the second dominant inductor. The first capacitor is electrically coupled between the first end of the first dominant inductor and the first end of the second dominant inductor. The first shunt capacitor is electrically coupled between the first end of the first dominant inductor and a ground potential, and the second shunt capacitor is electrically coupled between the first end of the second dominant inductor and the group potential. The first dominant inductor and the second dominant inductor are further coupled by one or both of magnetic coupling and parasitic mutual capacitive coupling.

Miniaturized passive low pass filter

Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class-AB, B, C, D, E and F in the different application scenarios.

Power amplifier and linearization techniques using active and passive devices

In an embodiment, a front-end transceiver may be provided. The front-end transceiver may include a receiver path, including a first receiver frequency converter configured to convert a received signal with a receiver frequency into a first receiver intermediate signal with a first receiver intermediate frequency; and a receiver direct conversion stage coupled to the first receiver frequency converter so as to receive the first receiver intermediate signal. The front-end transceiver may further include an oscillator signal generator respectively coupled to the first receiver frequency converter and to the receiver direct conversion stage so as to provide a first oscillator signal with a first oscillator frequency to the first receiver frequency converter and a first stabilizing signal with a first stabilizing frequency to the receiver direct conversion stage; wherein the oscillator signal generator may be configured so that the first oscillator frequency of the first oscillator signal may be selected such that any integer multiple of the first oscillator frequency of the first oscillator signal may be different from any integer multiple of the receiver frequency of the received signal. The front-end transceiver may also include a transmitter path.

Front-end transceiver

Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

Transformer with effective high turn ratio

An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.

Tunable high quality factor inductor

A method of manufacturing a 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and a dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Method of manufacturing 3-D spiral stacked inductor on semiconductor material

An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90&#xb0; in a lateral direction.

Integrated transformer and method of fabrication thereof

A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

High performance RF inductors and transformers using bonding technique

A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Growing community of inventors

Singapore, Singapore

Kiat Seng Yeo