Hynix Semiconductor Inc.

Hyundai Microelectronics Co., Ltd.

Ki-Young Oh

A capacitor of a semiconductor device is provided which includes a semiconductor substrate and insulating interlayer formed on the semiconductor substrate. The insulating interlayer has a contact hole which exposes a portion of the semiconductor substrate. A plug fills in the contact hole and the plug comes into contact with the semiconductor substrate. A contact layer is formed on the insulating interlayer. The contact layer comes into contact with the plug. First and second barrier layers are formed on the surface and sides of the contact layer, and a lower electrode is formed on the first barrier layer. A dielectric layer formed on the second barrier layer and lower electrode, and an upper electrode is formed on the dielectric layer.

Capacitor of semiconductor device and method of fabricating the same

A method of fabricating a capacitor in semiconductor devices includes forming an insulating interlayer on a semiconductor substrate; forming a contact hole in the insulating interlayer to expose a portion of the semiconductor substrate; forming a plug in the contact hole to be in contact with the semiconductor substrate; forming an adhesive layer, a first barrier layer and a first lower electrode on the insulating interlayer successively; selectively removing portions of the adhesive layer, the first barrier layer and the first lower electrode to define exposed sides of the adhesive layer, the first barrier layer and the first lower electrode; forming a second barrier layer at sides of the adhesive layer; forming a second lower electrode at the sides of the first and second barrier layers; forming a dielectric layer on the first lower electrode and second lower electrode; and forming an upper electrode on the dielectric layer.

Method of fabricating a capacitor for semiconductor devices

The present invention relates to a capacitor for semiconductor devices which prevents the resistance between a lower electrode and a plug therein from increasing due to oxidation. The present invention includes a semiconductor substrate, an insulating interlayer (having an elevated region) on the semiconductor substrate wherein a contact hole is formed in the elevated region of the insulating interlayer, a plug filling up the contact hole so as to be in contact with the semiconductor substrate, an adhesive layer on the insulating interlayer and in contacted with the plug, a first barrier layer on a top surface of the adhesive layer and a second barrier layer at sides of the elevated region of the adhesive layer, a first lower electrode on the first barrier layer, a second lower electrode at sides of the first and second barrier layers and the insulating interlayer, a dielectric layer on the first and second lower electrodes, and an upper electrode on the dielectric layer.

Capacitor for semiconductor devices

A capacitor of a semiconductor device is provided which includes a semiconductor substrate, an insulating interlayer formed on the semiconductor substrate, the insulating interlayer having a contact hole which exposes a predetermined portion of the semiconductor substrate, a plug filled in the contact hole, the plug coming into contact with the semiconductor substrate, a contact layer formed on the insulating interlayer, the contact layer coming into contact with the plug, first and second barrier layers formed on the surface and sides of the contact layer, a lower electrode formed on the first barrier layer, a dielectric layer formed on the second barrier layer and lower electrode, and a upper electrode formed on the dielectric layer.

Growing community of inventors

Chungcheongbuk-do, South Korea

Ki-Young Oh