Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Ki-Yong Lee

Jin-Wook Seo

Byoung-Keon Park

Tae-Hoon Yang

Kil-Won Lee

Dong-Hyun Lee

Jong-Ryuk Park

Yun-Mo Chung

Min-Jae Jeong

Jae-Wan Jung

Byung-Soo So

Tak-Young Lee

Bo-Kyung Choi

Seung-Kyu Park

Heung-Yeol Na

Yong-Duck Son

Jong-Won Hong

Jae-Bon Koo

Ul-Ho Lee

Seok-Rak Chang

Ji-yong Park

Hye-hyang Park

Ji-Yong Park

Sang-Il Park

Hoon Sik Kim

Yeong-Kyeong Seong

Kyoung-Gu Woo

Young-Dae Kim

Joo-Hwa Lee

Hee-Seon Park

Moo-Jin Kim

Sang-Wol Lee

Joon-Hoo Choi

Sung-Chul Kim

Tae-Hyeog Jung

Dae-Woo Lee

Kyung Ho Jung

Oh-Seob Kwon

Sang-Hyun Yun

Cheol-Ho Yu

Jong-Ha Lee

Kang-Min Kim

Eu-Gene Kang

Ji-Su Ahn

Ivan Maidanchuk

Soo-Beom Jo

Kwan-Ho Kim

Maxim Lisachenko

Kyoung-Bo Kim

Won-Bong Baek

Hye-Hyang Park

Joo-Chul Yoon

Su-Bin Song

Sei-Hwan Jung

Ye-hoon Kim

Seung-Woo Ryu

Seok-Jin Hong

Jeong Min Sung

Hyun-Woo Koo

Han-Hee Yoon

So-Youn Jung

Ok-Byoung Kim

Jae-Cheol Lee

Hyeon Yong Jang

Hyung Woo Yim

Yong-Soo Lee

Sang-Yon Yoon

Cheol-Su Kim

Baek-Hwan Cho

Hyun-Gue Kim

In-Sun Kang

Hyo-Jun Kim

Hyoung-Min Park

Joo-Hyuk Jeon

Hyo-a Kang

Sang-Woong Lee

Jae-Young Oh

Moon-Jin Kim

Chin-woo Kang

Suk-hoon Song

Hee-suk Yoon

Ju-Sang Lee

Hong-Jun Kim

Lee Kil-Won

Disclosed is a user interface which enables mark based interaction for images. The present disclosure relates to a user interface which enables mark based interaction for images, the images comprising a volume which is a three-dimensional image and slices which are two-dimensional images, each of which represents a cross section of the volume. At least two of the images each include the same visual mark for identifying at least one common region of interest. The user interface comprises: an input unit for receiving a user input associated with the same visual mark included in one of the images; and at least one component for enabling the interaction for the images including the same visual mark associated with the user input.

User interface system and method for enabling mark-based interaction for images

A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

Display device having a flexible display panel

A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method

An apparatus and a method for supporting acquisition of a multi-parametric image are provided. An apparatus for supporting acquisition of a multi-parametric image includes: a disease selector configured to select a suspected disease of a patient based on patient information; and an image selector configured to determine a set of imaging conditions of a multi-parametric magnetic resonance image corresponding to the suspected disease based on a multi-parametric magnetic resonance imaging model.

Apparatus and method for supporting acquisition of multi-parametric images

A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same

An apparatus and a method for diagnosis are provided. The apparatus for diagnosis lesion include: a model generation unit configured to categorize learning data into one or more categories and to generate one or more categorized diagnostic models based on the categorized learning data, a model selection unit configured to select one or more diagnostic model for diagnosing a lesion from the categorized diagnostic models, and a diagnosis unit configured to diagnose the lesion based on image data of the lesion and the selected one or more diagnostic model.

Apparatus and method of diagnosing a lesion using image data and diagnostic models

An apparatus and a method for mining temporal pattern are provided. A method for mining temporal pattern includes generating a data pattern group comprising data patterns from sequential data, generating a candidate pattern group comprising candidate patterns from the data pattern group, calculating a support value for a candidate pattern in a candidate pattern group based on a discrepancy value of the candidate pattern, and determining whether the candidate pattern satisfies a predetermined pattern requirement, based on the calculated support value.

Method and apparatus for mining temporal pattern

A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Display module including flexible panel

A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Thin film transistor and organic light emitting device including polycrystalline silicon layer

A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Separated target apparatus for sputtering and sputtering method using the same

A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Thin film transistor, method of manufacturing active layers of the thin film transistor, and display device

A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same

A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Organic light emitting diode display device and method of fabricating the same

Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

Sputtering apparatus

Growing community of inventors

Yongin-si, South Korea

Ki-Yong Lee