Lg Innotek Co., Ltd.

Korea Institute of Science and Technology

Ki Yong Hong

Eun Jung Ko

Byung Hak Jeong

Hyung Jin Jung

Sung Wook Moon

Duk Hyun Park

Jeon Kook Lee

Yong Jun Kim

Sang O Yoon

Sang Rock Park

Young Kuen Jung

Eun Bin Ko

An embodiment discloses a light emitting device and a display comprising the same. The light emitting device includes: a light transmitting substrate; a light emitting structure including a second conductive semiconductor layer disposed on the light transmitting substrate, a first conductive semiconductor layer disposed on the second conductive semiconductor layer, and an active layer disposed between the second conductive semiconductor layer and the first conductive semiconductor layer; an insulating layer covering the light emitting structure; a first ohmic electrode electrically connected to the first conductive semiconductor layer; a second ohmic electrode disposed on one side of the second conductive semiconductor layer facing the light transmitting substrate and electrically connected to the second conductive semiconductor layer; a first electrode electrically connected to the first ohmic electrode through the insulating layer; and a second electrode electrically connected to the second ohmic electrode through the insulating layer and the light emitting structure, wherein the active layer emits light of a red wavelength band, the second ohmic electrode includes a pad electrode disposed at the center of the second conductive semiconductor layer and a plurality of branched electrodes extending outward from the center of the second conductive semiconductor layer.

Light emitting device and display comprising same

A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.

Red light emitting device and lighting system

Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (), an AlGaInP-based active layer () on the first conductive semiconductor layer (), a second conductive clad layer () on the AlGaInP-based active layer (), a second conductive GaP layer () having first concentration on the second conductive clad layer (), and a second conductive GaP layer () having second concentration higher than the first concentration on the second conductive GaP layer () having the first concentration.

Light emitting device and lighting system

Metal oxide group NTC theremistor material made from MnCO.sub.3 +NiO+CuO+Co.sub.3 O.sub.4 +FeO.sub.3 TiO.sub.2 group as a basic composition. The invention is characterized by metal oxide group thermistor material made from MnCO.sub.3 +NiO+ZnO+Co.sub.3 O.sub.4 +Fe.sub.2 O.sub.3 +TiO.sub.2 group or MnCO.sub.3 +NiO+CuO+ZnO+Fe.sub.2 O.sub.3 +TiO.sub.2 group as a basic composition having respectively composition amounts by weight for each ingredient described in the text. According to the invention, the sintering temperature of the material can be reduced relative to the conventional material, and therefore there is advantage that manufacturing expense of the thermistor can be reduced.

Metal oxide group thermistor material

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Seoul, South Korea

Ki Yong Hong