Samsung Electronics Co., Ltd.

Ki Yeon Park

Min Su Kim

Jae Young Park

Se Young Jang

Sun Young Lee

Joon Hyuk Kim

Sang Yeol Kang

Eun Seok Hong

Kyung In Choi

Bon Young Koo

Bong Su Chun

Yong Suk Tak

Youn Soo Kim

Jae Jong Han

Seong Ho Yoon

Young Hee Ha

Ju Beam Lee

Jae Hyoung Choi

Tea Won Kim

Chul Eun Yun

Cha Young Yoo

Ho Jun Kwon

Hyo Jae Cho

A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

Method for fabricating semiconductor device

A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins.

Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variation

A multi layer electromagnetic wave absorber is provided. The absorber includes a surface layer comprising at least one of a dielectric lossy mixture and a magnetic lossy mixture, an absorption layer, laminated on a rear side of the surface layer, comprising: a dielectric lossy mixture having a higher loss than the dielectric lossy mixture for the surface layer, and a magnetic lossy mixture having a higher loss than the magnetic lossy mixture for the surface layer, and a boundary layer, laminated on a rear side of the absorption layer, comprising a conductive material.

Multi-layered electromagnetic wave absorber and manufacturing method thereof

A method for controlling a temperature of a terminal and a terminal supporting the same are provided. A terminal supporting temperature control includes a temperature sensor for detecting a temperature of the terminal, and a controller for performing at least one of a first throttle procedure including driving the controller with a first preset driving frequency when the temperature of the terminal detected by the temperature sensor is a first preset temperature, and driving the controller with a second driving frequency higher than the first driving frequency when the temperature of the terminal is reduced to a second preset temperature lower than the first preset temperature, and a second throttle procedure including driving the controller with the first preset driving frequency for a first time, and driving the controller with the second driving frequency higher than the first driving frequency for a second time after the first time elapses.

Method for controlling temperature of terminal and terminal supporting the same

A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.

Methods of manufacturing semiconductor devices

Growing community of inventors

Hwaseong-si, South Korea

Ki Yeon Park