Samsung Electronics Co., Ltd.

Goldstar, Co., Ltd.

Ki Wook Jung

Ki Seok Lee

Seok Han Park

Je Min Park

Dong Oh Kim

Chan Sic Yoon

Ju Yeon Jang

Ho In Lee

Jin Woo Hong

Sang-Uk Kim

Jinwoo Hong

Jong S Kim

Hyun C Ko

Won J Choi

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same

A semiconductor package includes: a substrate; a first semiconductor chip disposed on the substrate; a capacitor disposed on the substrate and spaced apart from the first semiconductor chip in a first direction; an insulating layer disposed on the substrate and covering the capacitor; a first heat conductive layer at least partially surrounding side walls of the first semiconductor chip and disposed on the insulating layer, wherein the first heat conductive layer is in contact with the side walls of the first semiconductor chip, and wherein the first heat conductive layer includes a first material that is a conductive material; and a second heat conductive layer disposed on the first heat conductive layer, wherein the second heat conductive layer is in contact with the first heat conductive layer, wherein the second heat conductive layer includes a second material that is a non-conductive material.

Semiconductor package

Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same

A method for fabricating a semiconductor device includes forming a device isolation film on a substrate between first and second regions, forming first and second sealing films, such that an etch selectivity of the second sealing film is smaller than that of the first sealing film, patterning the first and second sealing films to expose the second region and a portion of the device isolation film, such that an undercut is defined under a lower surface of the second sealing film, forming a filling film filling the undercut, a thickness of the filling film being thicker on a side surface of the second sealing film than on an upper surface thereof, removing a portion of the filling film to form a filling spacer in the undercut, forming a high-k dielectric film and a metal film on the filling spacer, and patterning the high-k dielectric film and the metal film.

Method for fabricating semiconductor device

A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.

Semiconductor laser diode

Growing community of inventors

Seoul, South Korea

Ki Wook Jung