Samsung Electronics Co., Ltd.

Korea Institute of Civil Engineering and Building Technology

Ki Tae Park

Bo Geun Kim

Yeong Taek Lee

Myoung Gon Kang

Moo Sung Kim

Hyun Jun Yoon

Sang Yong Yoon

Min Gun Park

Doo Gon Kim

Jung Dal Choi

Min Seok Kim

Yoon Hee Choi

Chang Wook Lee

Sung Jin Kim

Sang Ho Park

Young Min Park

Jae Man Joo

Joo Hyung Lee

Byung Lyul Park

Young Jae Kim

Jin Doo Kim

Hyeong Yeol Kim

Hak Hwan Kim

Hee Seok Park

Joungeun Yoo

Bok Soon Kwon

Kyeong Ik Min

Sang Bum Lee

Jong-young Kim

Gil Han Park

Youngsun Song

Joon Seok Oh

Johannes Buesing

Seon Young Myoung

Young Su Ser

Heon Ho Jeong

Tae-Rae Kim

Sang Duk Yoo

Soon Wook Hwang

Myoung Sik Jung

Hyun-Woo Yu

Jong Ho Yun

Jin Man Han

Sung Kyu Jo

A semiconductor package includes an insulating layer including a first face and a second face opposite each other, a redistribution pattern including a wiring region and a via region in the insulating layer, the wiring region being on the via region, and a first semiconductor chip connected to the redistribution pattern. The first semiconductor chip may be on the redistribution pattern. An upper face of the wiring region may be coplanar with the first face of the insulating layer.

Semiconductor package

A roller is capable of smoothly rotating without any burr on a rolling surface. A dish washer including the roller includes: a case; a basket configured to accommodate dishes; a rail configured to guide the basket to be put into or taken out of the case; and a basket roller coupled with the basket and configured to move along the rail, the basket roller comprising a rolling portion configured to roll in contact with the rail, a first flare portion extending in a first direction from the rolling portion, and a second flare portion extending in a second direction from the rolling portion, the second direction being opposite to the first direction, wherein a diameter of the first flare portion is greater than a diameter of the second flare portion.

Roller, method of manufacturing the same, and dish washer having the same

Provided is a home appliance including: a main body having a cavity; a door rotatably coupled to a front side of the main body to open and close the cavity; a holder moveably mounted to the door; a decorative plate mounted to the holder to be disposed on a front surface of the door; and a wire connected to the holder and the main body to vary a tension depending rotation of the door, and configured to move the holder by the tension.

Home appliance

Disclosed is a dishwasher having a structure improved to enhance the efficiency of washing. The dishwasher includes a main body, a washing tub provided in the main body, a door configured to close or open an open side of the washing tub, a fixed nozzle fixed on another side of the washing tub and configured to spray washing water, a vane configured to reflect the washing water sprayed via the fixed nozzle toward dishes while being moved within the washing tub, and a rail assembly configured to guide the movement of the vane. The vane is rotationally coupled to the rail assembly to change a direction of movement of the washing water sprayed via the fixed nozzle.

Dish washer

A heat shrinkable tube-covered rebar basically solves a problem of corrosion of a rebar embedded in a concrete structure by covering the rebar with a heat shrinkable tube, which is a polymer material, and a thermosetting resin to prevent the rebar embedded in the concrete structure from corroding, and easily integrates a reinforcing bar with the heat shrinkable tube and perform a first anti-corrosion treatment on the reinforcing bar by applying a thermosetting resin between the reinforcing bar and the heat shrinkable tube.

Heat shrinkable tube-covered rebar and method of preventing rebar from corroding using the same

A composition for an optical film, including a first liquid crystal compound represented by the following Chemical Formula 1 and a second liquid crystal compound represented by the following Chemical Formula 2, wherein a difference between a solubility parameter of the first liquid crystal compound and a solubility parameter of the second liquid crystal compound is about 2.50 to about 2.90 wherein in Chemical Formulae 1 and 2, X, Rto R, Z, n, m, and p are the same as described in the detailed description.

Composition for optical film, and films and display device

A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Flash memory device using adaptive program verification scheme and related method of operation

Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line.

Method compensation operating voltage, flash memory device, and data storage device

A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Memory sensing system comprising nonvolatile memory device and related method of operation

Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step.

Read method for nonvolatile memory device, and data storage system using the same

A method programming a non-volatile memory device using an incremental step pulse programming (ISPP) scheme is disclosed. The method includes operating in a first program mode during which a program pulse width is constant and a program voltage is successively increased per ISPP cycle, and during which a program operation and a verify operation are alternately repeated, and operating in a second program mode during which the program pulse width is successively increased per ISPP cycle and the program voltage is constant, and during which the program operation and the verify operation are alternately repeated, wherein operation in the second program mode follows operation in the first program mode only when the program voltage equals a maximum value, or when a verification result count value satisfies a predetermined condition.

Non-volatile memory device and ISPP programming method

Methods of programming nonvolatile memory devices include programming a plurality of nonvolatile multi-state memory cells in the non-volatile memory device with state-converted data derived from non-state-converted data. This state-converted data may be associated with a greater number of erased states relative to the non-state-converted data, when programmed into the plurality of nonvolatile memory cells. The methods also include generating a flag having a value that indicates which ones of the plurality of nonvolatile memory cells have been programmed with data that is swapped with data in other ones of the plurality of nonvolatile memory cells. This flag may also be programmed into the nonvolatile memory device. Operations may also be performed to read the state-converted data (and flag) from the plurality of nonvolatile memory cells and then decode the state-converted data into the non-state-converted data, based on the value of the flag.

Multi-level non-volatile memory device, system and method with state-converted data

A semiconductor memory device for performing additional error correction code (ECC) correction according to a cell pattern and an electronic system including the same are provided. The semiconductor memory device includes a memory cell array configured to store user data; and an ECC engine configured to perform first ECC encoding on the user data, output a result of the first ECC encoding as ECC information, detect a predetermined cell pattern based on the user data, and additionally perform second ECC encoding on data of a cell corresponding to the predetermined cell pattern detected. Accordingly, data errors that may occur due to a certain cell pattern are prevented.

Semiconductor memory device for performing additional ECC correction according to cell pattern and electronic system including the same

Growing community of inventors

Seongnam-si, South Korea

Ki Tae Park