Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Dongjin Semichem Co., Ltd.

Ki Soo Shin

Geun Su Lee

Jae Chang Jung

Sung Koo Lee

Cheol Kyu Bok

Keun Kyu Kong

Seung Chan Moon

Young Sun Hwang

Soo Han Choi

Jung Woo Kim

Jin Soo Kim

Jae Hyun Kim

Min Ho Jung

Cha Won Koh

Jae Hyun Kang

Deog Bae Kim

Kee Joon Oh

Jae Chang Chung

Se Jin Choi

Gyu Dong Park

Sang Hyang Lee

Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (HO) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (&#x2014;COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (&#x2014;SOH) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R, R, R, R, R, A, l and n are defined in the specification.

Cleaning solution for removing photoresist

Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises HO as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. 

Cleaning solution for photoresist and method for forming pattern using the same

A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator

Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises HO as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because HO is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Solution composition for removing a remaining photoresist resin

Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness).

Photoresist polymer and photoresist composition containing the same

Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved.

Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion

Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device

Photoresist monomers, polymers thereof and photoresist compositions containing the same

A hot plate oven used in a thermal process of forming an ultrafine photoresist pattern and a method of forming a pattern using the same. More particularly, a hot plate oven used to flow photoresist under the high pressure in the sealed oven during a resist flow process.

Method of forming photoresist pattern using hot plate oven

Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm)wherein, X, X, R, Rand Rare defined in the specification.

Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same

Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.

Cleaning solutions for removing photoresist materials and a method of forming underlying layer patterns of semiconductor devices using the same. The cleaning solutions for removing photoresist include a solvent mixture of HO and an organic solvent, an amine compound, a transition metal-removing material and an alkali metal-removing material, and may further include a hydrazine hydrate.

Photoresist monomers, polymers thereof and photoresist compositons containing the same

A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

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Kyoungki-do, South Korea

Ki Soo Shin