Samsung Electronics Co., Ltd.

Ki-soo Kim

Sun-Min Lee

Seon-Ju Lee

Sang-hyun Lee

Ki-Sang Yoon

Seok-Woo Kim

Da-Jeong Kim

Se-lim Yoon

Jun-kyo Lee

Cheol-Woong Seo

Yeon-Jin Jo

Young-Min Park

Sang-min Hyun

Chi-young Ahn

Jung-Hoon Kim

Jong-chan Kwon

Byeong-soo Kim

No-young Chung

Seung-chan Lee

Sang-Il Park

Yun-Su Kim

Jae-Hwa Moon

Jun-Pil Moon

Young-min Park

Akio Misaka

Mike Nuttall

A method of displaying a function of a button of an ultrasound apparatus on the button includes displaying information about one or more functions provided by the ultrasound apparatus, selecting one from among the one or more functions which have been displayed, determining a button in which the selected function is to be set based on an external input signal for matching the selected function to the button in which the selected function is to be set; and displaying information about the selected function on the determined button.

Method and apparatus for displaying function of button of ultrasound apparatus on the button

A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.

Methods of manufacturing semiconductor devices, method sof performing extreme ultraviolet ray exposure, and methods of performing optical proximity correction

An optical proximity correction (OPC) method includes preparing basic data for OPC, measuring with a scanning electron microscope (SEM) an after development inspection (ADI) critical dimension (CD) of a photoresist (PR) pattern with respect to a sample, measuring with the SEM an after cleaning inspection (ACI) CD of a wafer pattern formed using the PR pattern, generating CD data of the sample reflecting PR shrinking caused by the SEM measurement by using the measured ADI CD of the PR pattern and the measured ACI CD of the wafer pattern; and generating an OPC model based on the basic data and the CD data of the sample.

Optical proximity correction method and method of manufacturing mask by using the same

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Gunpo-si, South Korea

Ki-soo Kim