Hynix Semiconductor Inc.

Skhynix Inc.

Hyundai Electronics Industries Co. Ltd.

Toshiba Memory Corporation

Ki Seon Park

Kyong Min Kim

Jae Sung Roh

Ki Hong Lee

Seung Ho Pyi

Nam Kyeong Kim

Chan Lim

Dong Su Park

Hyun Chul Sohn

Byoung Kwon Ahn

Moon Sig Joo

Seung Kyu Han

Yong Top Kim

Daisuke Watanabe

Toshihiko Nagase

Kazuya Sawada

Jung Ryul Ahn

Koji Ueda

Jung Park

Eun Seok Choi

Makoto Nagamine

Youngmin Eeh

You Sung Kim

Se Jun Kim

Kwang Jun Cho

Heung Jae Cho

Won Joon Choi

Han Sang Song

Young Ok Hong

Kil Ho Lee

Hyun Seung Yoo

Won Sic Woo

Bo Mi Lee

Dong Woo Shin

Kyoung Hwan Park

Myung Shik Lee

Guk Cheon Kim

Kyung Pil Hwang

Chang Seo Park

Ga Young Ha

Deok Sin Kil

Gil Jae Park

Yang Kon Kim

Jae Young Park

According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.

Magnetic memory and manufacturing method of the same

A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer, and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

A method of fabricating a non-volatile memory device having a charge trapping layer includes forming a tunneling layer, a charge trapping layer, a blocking layer and a control gate electrode layer over a substrate, forming a mask layer pattern on the control gate electrode layer, performing an etching process using the mask layer pattern as an etching mask to remove an exposed portion of the control gate electrode layer, wherein the etching process is performed as excessive etching to remove the charge trapping layer by a specified thickness, forming an insulating layer for blocking charges from moving on the control gate electrode layer and the mask layer pattern, performing anisotropic etching on the insulating layer to form an insulating layer pattern on a sidewall of the control gate electrode layer and a partial upper sidewall of the blocking layer, and performing an etching process on the blocking layer exposed by the anisotropic etching, wherein the etching process is performed as excessive etching to remove the charge trapping layer by a specified thickness.

Method of fabricating non-volatile memory device having charge trapping layer

A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

Nonvolatile memory device and method of fabricating the same

A method for fabricating a non-volatile memory device with a charge trapping layer wherein a tunneling layer, a charge trapping layer, a blocking layer, and a control gate electrode are formed on a semiconductor substrate. A temperature of the control gate electrode is increased by applying a magnetic field to the control gate electrode. The blocking layer is densified by allowing the increased temperature to be transferred to the blocking layer contacting the control gate electrode.

Method for fabricating non-volatile memory device with charge trapping layer

Disclosed is a method for forming a capacitor of a semiconductor device. In such a method, a mold insulating layer is formed on an insulating interlayer provided with a storage node plug, and the mold insulating layer is etched to form a hole through which the storage node plug is exposed. Next, a metal storage electrode with an interposed WN layer is formed on a hole surface including the exposed storage node plug and the mold insulating layer is removed. Finally, a dielectric layer and a plate electrode are formed in order on the metal storage electrode.

Method for forming capacitor of semiconductor device

Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is formed on the dielectric film. The HfxAlyOz dielectric film consists of laminated HfxAlyOz thin films which are different in compositions of Hf and Al such that the lower HfxAlyOz thin film adjoining the storage electrode has a larger composition ratio of Al than that of Hf and the upper HfxAlyOz thin film has a larger composition ratio of Hf than that of Al, and the upper HfxAlyOz thin film is subjected to heat treatment under an oxygen atmosphere after its deposition.

In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed in a zigzag pattern for storage electrodes. A sacrificial oxide film is deposited by burying the contact holes for storage electrodes in a thickness such that an outer portion of the storage electrodes having a relatively short interval is completely buried while an outer portion the storage electrodes having a relatively long interval is not completely buried. The sacrificial oxide film and the insulation film are etched back to form a support network enclosing the respective storage electrodes and interconnected to each other.

Capacitor of semiconductor device and method for forming the same

In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Method for forming capacitor of nonvolatile semiconductor memory device

A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Nonvolatile semiconductor memory device

There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta O film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta O film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta O film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta O film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta O film on the metal layer, wherein the process of depositing the Ta O film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta O film.

Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer

There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta,O,, BST((Ba,Sr,)TiO,) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O,gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O,, by means of plasma process using O,gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O,gas.

Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma

Growing community of inventors

Kyoungki-do, South Korea

Ki Seon Park