Electronics and Telecommunications Research Institute

Lg Chem, Ltd

Ki Seok Jang

Gyungock Kim

In Gyoo Kim

Sang Hoon Kim

Jiho Joo

Min Soo Park

Jaegyu Park

Yong Sung Eom

Kwang-Seong Choi

JiHo Joo

Sun Ae Kim

Jin Hyuk Oh

Sang Gi Kim

Gwang-Mun Choi

Chanmi Lee

Se Woo Yang

Suk Ky Chang

Yongseok Choi

In Cheon Han

Seok-Hwan Moon

Hyuk Je Kwon

Hyundai Park

Myung Joon Kwack

Min Jin Ko

Jin Young Park

Won Jong Kwon

Myungjoon Kwack

Ki Youl Lee

Shin Jung Choi

Jeong Woo Park

Junghyung Pyo

Sanghoon Kim

Duk Jun Kim

Sahnggi Park

Young Hee Lim

Woo Ha Kim

Byoung Bae Lee

Yong Su Park

Jae Seung Oh

Dongwoo Suh

Sang Ho Kim

Do Won Kim

Ik Hwan Cho

Kap-Joong Kim

Jae Duk Park

Jong Rok Jeon

Dae Seo Park

Ho-Gyeong Yun

Jongbum You

Bum Gyu Chol

Provided is a method for manufacturing an electronic device. The method for manufacturing the electronic device includes mapping good elements and defective elements on a substrate, providing a first transparent structure including a first adhesive layer on the substrate, selectively providing first laser light to the defective elements to cure the first adhesive layer on the defective elements and separate the defective elements from the substrate, providing a second transparent structure including a second adhesive layer, which adheres to new elements replaced for the defective elements, on the substrate, and selectively providing second laser light to the new elements to bond the new elements to the substrate.

Method of manufacturing electric device

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

Semiconductor package with intermetallic-compound solder-joint comprising solder, UBM, and reducing layer materials

Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

Method for transferring and bonding of devices

Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.

Wire for electric bonding

Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

Method for manufacturing semiconductor package

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Opto-electronic system including optical input/output device

Method of manufacturing optical input/output device

Provided are an optical member, a pressure-sensitive adhesive composition, and an LCD. The optical member may have excellent endurance reliability even when a pressure-sensitive adhesive layer is formed to have a thickness of 20 &#x3bc;m or less.

Optical member, pressure-sensitive adhesive composition and liquid crystal display

Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

Photodetector

Optical input/output device, optical electronic system including the same, and method of manufacturing the same

The present invention relates to a pressure sensitive adhesive composition, a polarizer and a liquid crystal display device. The present invention may provide a pressure sensitive adhesive which can have excellent stress relaxation characteristic to effectively inhibit light leakage by dimension change of optical films such as polarizing plates. In addition, a pressure sensitive adhesive having excellent physical properties such as adhesion durability and workability may be provided.

Pressure-sensitive adhesive composition

Provided are a pressure-sensitive adhesive (PSA) composition including an interpenetrating polymer network structure in a cured state, and including an acrylic resin and a crosslinking agent component that consists of a bifunctional crosslinking agent, a polarizer and a liquid crystal display. Provided are the PSA composition, the polarizer including a cured product of the PSA composition, and the liquid crystal display, which have excellent workability and optical properties, durability and reliability, at high temperature or humidity condition, and significantly increase productivity of optical members such as a polarizer, since the time-dependent change of the pressure-sensitive adhesive strength is rapidly ended after fabrication.

Pressure-sensitive adhesive composition, polarization plate, and liquid crystal display

An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.

Optical coupling device

Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.

Semiconductor laser and method of fabricating the same

Growing community of inventors

Daejeon, South Korea

Ki Seok Jang