Korea Research Institute of Chemical Technology

Ki-Seok An

Taek-Mo Chung

Chang-Gyoun Kim

Sun-Sook Lee

Young-Kuk Lee

Sun Sook Lee

Yunsoo Kim

Chang Gyoun Kim

Young Ki Lee

Se Jin Jang

Sung Woo Myung

Beyong Hwan Ryu

Jongsun Lim

Ki-Jeong Kong

Dong-Ju Jeon

Ha Kyun Jung

Bo-Keum Park

Jin Kyu Han

Won-Tae Cho

Seung-Ho Yoo

Kiwhan Sung

Sheby Mary George

Hong Suk Jang

Jeong-O Lee

Hyunju Chang

Jong-Sun Lim

Won Jin Choi

Seog-Jong Jeong

Taek Seung Yang

Wooseok Song

Han Sun Kim

Young Kuk Lee

Daesung Jung

The present invention relates to a method using chemical reaction transparency of graphene, and more specifically to a method capable of forming a desired material by a catalytic reaction on a graphene surface using the graphene which inhibits oxygen diffusion without blocking electron delivery, and an applied method thereof.

Method of using chemical reaction transparency of graphene

A method of manufacturing a porous composite electrode including: preparing an ink including a carbon material and a binder; coating a substrate with the ink to manufacture a composite electrode; and irradiating the composite electrode with microwave to remove the binder and an organic material, and a method of removing an organic material of a porous composite electrode.

Manufacturing method of porous composite electrode and organic removal method of porous composite electrode

Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Strontium precursor, method for preparing same, and method for forming thin film by using same

The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; Rand Rare independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.Sn[O-A-NRR]&#x2003;&#x2003;[Formula 1]

Tin amino-alkoxide complexes and process for preparing thereof

Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition

A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same

A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD):wherein, R, R, Rand Rare each independently Calkyl optionally carrying one or more fluorine substituents; and m is an integer in the range of 1 to 3.

Volatile copper aminoalkoxide complex and deposition of copper thin film using same

Growing community of inventors

Daejeon, South Korea

Ki-Seok An