Samsung Electronics Co., Ltd.

Ki-Sang Kang

Je-Young Park

Jun-Ho Lee

Jae-il Lee

Do-young Kam

Ju-il Kang

Hyun-seop Shim

Seong-goo Kang

Sang-Seok Kang

Eun-Seok Lee

Kyeong-Seon Shin

Kyeong-seon Shin

Ae-yong Chung

Tsutomu Akiyama

Kazuhiro Shibano

A semiconductor memory test device and method thereof are provided. The example semiconductor memory test device may include a fail memory configured to store at least one test result of a memory under test, a mode selecting unit configured to output a selection signal for selecting a memory address protocol of the fail memory based upon which one of a plurality of test modes is active in the memory under test and an address arranging unit configured to arrange address signals to conform with the selected memory address protocol in response to the selection signal received from the mode selecting unit.

Semiconductor memory test device and method thereof

A multifunctional handler system for electrical testing of semiconductor devices is provided. The multifunctional handler system comprises: (1) a semiconductor device processing section comprising a loading unit including a buffer, a sorting unit including a separate marking machine, and a unloading unit; (2) a semiconductor device testing section, separate from the semiconductor device processing section, comprises a test chamber, the test chamber is separated into two or more test spaces, and the test spaces of the test chamber include a second chamber positioned at a lower position, a first chamber positioned above the second chamber, and pipelines for connecting the first and second chambers to each other; and (3) a host computer which is independently connected to the semiconductor device processing section and the semiconductor device testing section and controls tray information, test results, marking information, and test program information.

Multifunctional handler system for electrical testing of semiconductor devices

Example embodiments may provide a method of testing semiconductor devices by identifying units of lots and a test tray such that a plurality of lots having semiconductor devices may be continuously tested by a handler. Example embodiments may also provide a handler used to test the semiconductor devices.

Method of testing semiconductor devices and handler used for testing semiconductor devices

A semiconductor device test handler for maintaining stable temperature in a test environment may include a loading unit that loads a plurality of semiconductor devices mounted on a test tray; a soak chamber configured to receive the test tray from the loading unit and to age the semiconductor devices at an aging temperature; and a test chamber configured to receive and test the aged semiconductor devices. The test chamber may include: a test board; a first chamber; a second chamber; one or more pipelines connected to the first and second chambers that allow a temperature-control medium to flow between the first and second chambers; a de-soak chamber that further ages the tested semiconductor devices so that the tested semiconductor devices substantially return to ambient temperature; and a sorting and unloading unit that sorts the tested semiconductor devices according to results of the test and that unloads the sorted semiconductor devices.

Handlers for testing semiconductor devices that are capable of maintaining stable temperature in test environments

Provided are a memory device testing apparatus and method of operating such an apparatus that can reduce the time required to test a memory device such as a DRAM. The memory testing apparatus includes a pattern generator, a test head, an address pointer, a selector, a failure memory, a failure bit counter and a controller for coordinating the operation of the various elements. Depending on the signals received from the controller, the pattern generator will generate background pattern(s) or test patterns and address information that are, in turn, output to the memory device under test and the selector. During functional testing of the memory device, failure data is accumulated in a failure memory and subsequently output to a failure bit counter using address information from the address pointer while the background or test pattern is being written to the memory device.

Memory testing apparatus and method

An integrated circuit of a semiconductor device has a chip malfunction controlling circuit embedded in a chip. The circuit comprises a fusing part, to which a cutting will be made in the manufacturing process according to the result of the discrimination of a defect in a chip, with one end thereof being connected to a first power terminal. A signal generating part is connected to the other end of the fusing part, and to a second power terminal. The signal generating part generates a discrimination signal of discriminating whether the chip is defective or not, by whether the fusing part has been cut or not. The discrimination signal is supplied to at least one internal function circuit, and inhibits its operation if the fusing part has been cut. Furthermore, the chip malfunction controlling method comprises generating a discrimination signal that has a first state if a test fuse has been cut and a second state if the test fuse has not been cut. Then the discrimination signal is applied to the chip internal function circuits, to inhibit their operation if the fuse has been cut.

Semiconductor device with malfunction control circuit and controlling method thereof

Integrated circuit memory devices are tested by loading into a first defect interpretation memory, results of a preceding comparison test between test pattern data that is input into a memory device and resultant data that is output from the memory device. Automatic switching then takes place to a second defect interpretation memory. The results of a succeeding comparison test are loaded therein, while simultaneously analyzing results from the preceding comparison test in the first defect interpretation memory. Then, automatic switching back to the first defect interpretation memory takes place, and results of a next succeeding comparison test are loaded therein while simultaneously analyzing the results from the succeeding comparison test in the second defect interpretation memory. Automatic switching and automatic switching back are repeatedly performed, to thereby simultaneously test a memory device and analyze memory test results.

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Yongin-si, South Korea

Ki-Sang Kang