Electronics and Telecommunications Research Institute

Korea Telecom

Ki S Park

Yong Tae Lee

Kwang Y Oh

Sang B Kim

Sang Hwan Lee

Min Kyu Song

Seung Goo Kang

Hong Man Kim

Gwan Chong Joo

A bidirectional optical communication module using a single optical fiber is disclosed. The module includes an optical fiber having a cut-away surface polished to have an acute angle between the cut-away surface and an axis of the optical fiber, a semiconductor laser emitting a transmission light coupled with a light fiber core, and a bidirectional optical device having a light receiving portion absorbing a receiving light outputted from the light fiber core for thereby optically coupling a bidirectional optical device in which a light receiving device is integrated into a light transmitting semiconductor laser as a single chip and an optical fiber when fabricating an optical module for implementing a light signal transmission and receiving operation using one optical fiber.

Bidirectional optical communication module using single optical fiber

This invention provides an opto-electronic integrated circuit for receiving optical signals as well as method for manufacturing the same in which both the receipt sensitivity and reliability are improved to achieve both high operation speed and process simplicity. This is accomplished by integrating the photo-detector and the amplifier on a single chip, which are essential elements of the optical receiver of the optical communication system. Also, layer between a PIN photo-detector and a junction-field effect transistor (JFET) is shared as large as possible through a two times epitaxial growth. In this way, the opto-electronic integrated circuit is optimized.

Pin heterojunction photo diode with undercut gate jifet

The present invention provides a method for manufacturing a field effect transistor which overcomes problems occurring in the manufacture of InP material junction field effect transistors. Because the electron saturation velocity is higher than that of silicon or GaAs it is desirable to have a gate length shorter than the mask length as well as to have the source, drain, and gate metals evaporated by the self-aligned method. The present invention provides a method of achieving gate lengths of 1 .mu.m or shorter without requiring an expensive electron beam apparatus or X-ray lighography apparatus.

Method for manufacturing a junction field effect transisor

The present invention provides a method for manufacturing a field effect transistor which overcomes problems occurring in the manufacture of InP material junction field effect transistors. Because the electron saturation velocity is higher than that of silicon or GaAs it is desirable to have a gate length shorter than the mask length as well as to have the source, drain, and gate metals evaporated by the self-aligned method. The present invention provides a method of achieving gate lengths of 1 .mu.m or shorter without requiring an expensive electron beam apparatus or X-ray lithography apparatus.

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DongKu, South Korea

Ki S Park