Hyundai Electronics Industries Co. Ltd.

Ki Nam Park

Oh Bong Kwon

Jae Won Eom

Do Young Lee

The present invention relates to an image sensor; and, more particularly, to a CMOS image sensor employing photodiodes which linearly increase the ability of keeping up photogenerated charges. In accordance with the present invention, a unit pixel of a CMOS image sensor comprises: a photodiode including: a) an N-type semiconductor region and a P-type semiconductor region for a PN junction to which a reverse bias is applied; and b) a highly doped region formed on one of the N-type semiconductor region and the P-type semiconductor region for collecting carriers of electron-hole pairs generated in a depletion region of the PN junction so that a voltage drop of the reverse bias is linear; and an image data processing unit for producing an image data in response to the carriers transferred from the highly doped region.

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Ichon-chi, South Korea

Ki Nam Park