Hyundai Electronics Industries Co. Ltd.

Ki-Nam Park

Chan-Ki Kim

Kang-Jin Lee

Do-Young Lee

Jae-Won Eom

Oh-Bong Kwon

A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.

Method for reducing dark current in image sensor

A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Color image sensor and method for fabricating the same

A semiconductor image sensor for detecting a light incident thereto, includes a semiconductor substrate divided into a light sensing region and a peripheral circuit region, a photodiode formed on top of the light sensing region, at least one transistor formed on top of the peripheral circuit region, at least one insulating layer formed on top of the photodiode and the transistor; and an optical layer formed on the insulating layer to efficiently transmit the light to the photodiode.

Growing community of inventors

Ichon-shi, South Korea

Ki-Nam Park