Semes Co., Ltd.

Ki-Moon Kang

Kihoon Choi

Chan Young Heo

Hae-Won Choi

Jaeseong Lee

Anton Koriakin

Do Heon Kim

Hyo Won Yang

Hyun Goo Park

Tae-Keun Kim

Seungho Lee

Yong Hun Kim

In Il Jung

Minhee Cho

Sang Ho Lee

Kwon Taek Lim

Seung Un Oh

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a high pressure chamber configured to form a treating space for performing a supercritical treating process therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; and an exhaust unit configured to exhaust an atmosphere of the treating space, and wherein the fluid supply unit comprises a cover plate opposite to a treating surface of a substrate supported by the substrate support unit, and having a supply hole for supplying the treating fluid to the treating surface.

Method and apparatus for treating substrate

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; and a fluid supply unit configured to supply a fluid in a supercritical state to the treating space, wherein the fluid supply unit comprises: a supply line provided at a top wall of the chamber; and a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and wherein the discharge unit comprises: a body having a discharge fluid channel for the fluid; a nozzle plate provided at a discharge end of the body; and a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.

Apparatus for treating a substrate

The inventive concept provides a substrate treating method. The substrate treating method includes first treating a substrate in a treating space according to a reference recipe; second treating a substrate in the treating space according to the reference recipe after the first treating; and optimizing an inner ambient of the treating space according to the reference recipe, and wherein the optimizing includes a purge operation of supplying and discharging a treating fluid to/from the treating space.

Apparatus for treating substrate and method for treating a substrate preliminary class

An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a fluid supply unit for supplying supercritical fluid to the treatment space, and a controller configured to control the fluid supply unit, wherein the fluid supply unit is configured to selectively supply the supercritical fluid at a first density or a second density higher than the first density into the treatment space. Thus, drying efficiency of the substrate when drying the substrate using the supercritical fluid may be improved.

Apparatus for treating substrate

Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

Method for treating substrate

Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

Substrate cleaning composition, substrate treating method, and substrate treating apparatus

Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Substrate treating apparatus and substrate treating method

Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Anhydrous substrate cleaning composition, substrate treating method, and substrate treating apparatus

Disclosed is a method of regenerating a phosphoric acid solution from a treatment liquid including silicon (Si), hydrogen fluoride (HF), and phosphoric acid, the method including removing the silicon by supplying hydrogen fluoride corresponding to a preset amount or more to the treatment liquid, removing the hydrogen fluoride by heating the treatment liquid to a boiling point of hydrogen fluoride or higher, and adjusting a temperature and a concentration of the phosphoric acid to preset values.

Growing community of inventors

Chungcheongnam-do, South Korea

Ki-Moon Kang