Samsung Electronics Co., Ltd.

Ki-Man Lee

Hyun-Joong Kim

Yong-Gu Lee

Sang-Hun Kim

Mi-Sun Kim

Mi-Ra Seo

Woo-Cheol Jung

Tae-sun Kim

Bum-Joon Youn

Jae-Kyung Seo

Jin-Man Kim

Kwang-sub Yoon

Ji-Ho Kim

Yu-Ra Kim

Yeo-Jin Lee

A method for communicating data by an electronic device is provided. The method includes transmitting a signal including audio/video (A/V) data to a first external electronic device through a first communication module, while connected with the first external electronic device, generating data or a signal unrelated to the A/V data or receiving the data or signal unrelated to the A/V data from an external electronic device other than the first external electronic device, and providing an audio or a video through a display or an embedded sound device based on at least a portion of the data or the signal unrelated to the A/V data or transmitting the at least a portion of the data or the signal unrelated to the A/V data to a second external electronic device through a second communication module.

Method for outputting audio and electronic device for the same

In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Methods of manufacturing a semiconductor device

In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Methods of manufacturing semiconductor devices and electronic devices

Growing community of inventors

Suwon-si, South Korea

Ki-Man Lee