Suzhou Lekin Semiconductor Co., Ltd.

Lg Innotek Co., Ltd.

Lg Innotekco., Ltd.

Ki Man Kang

Eun Dk Lee

Sang Youl Lee

Hyun Don Song

Seung Hwan Kim

Youn Joon Sung

Do Yub Kim

Jung Hun Oh

Hyun Soo Lim

Jong Sub Lee

Sung Dal Jung

Min Sung Kim

Ji Hyung Moon

Jung Woo Lee

Ha Na Kim

Jin Wook Lee

Yong Gyeong Lee

Hiroshi Kodaira

Baek Jun Kim

Yee Rang Hong

Eun Ju Hong

Sung Won David Roh

Su Lk Park

Yoon Min Jo

A semiconductor device package includes a substrate; and a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate. Further, the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The semiconductor device package also includes a plurality of first interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the first conductivity-type semiconductor layer; and a plurality of second interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the second conductivity-type semiconductor layer.

Semiconductor device package

Disclosed in an embodiment are a semiconductor device and a light-emitting device package including same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged in a matrix shape in the central area of the substrate; passivation layers arranged on upper surfaces and lateral surfaces of the semiconductor structures and on the edge area of the substrate; a plurality of first wiring lines which are arranged at lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include first end parts extending from the central area to the edge area of the substrate; a plurality of second wiring lines which are arranged at the lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include second end parts extending from the central area to the edge area of the substrate; a plurality of first pads penetrating the passivation layer so as to be connected to the plurality of first end parts; and a plurality of second pads penetrating the passivation layers so as to be connected to the plurality of second end parts, wherein the plurality of semiconductor structures include a plurality of first semiconductor structures, which are arranged in a first area of the central area, and a plurality of second semiconductor structures, which are arranged in a second area of the central area, and the size of the plurality of first semiconductor structures differs from the size of the plurality of second semiconductor structures.

Semiconductor device and light emitting element package including same

Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.

Disclosed is a semiconductor device package comprising: first insulation layers disposed between first wiring lines and second wiring lines; a plurality of first pads electrically connected to the first wiring lines, respectively; and a plurality of second pads electrically connected to the second wiring lines, respectively, wherein the line having the longest length extended in a first direction, among the plurality of first wiring lines, has an area of a region, which is overlapped with an electrically connected semiconductor structure, that is larger than that of the line having the shortest extended length.

Display apparatus

Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 &#x3bc;m to 40 &#x3bc;m and the thickness of the wavelength conversion layer is 1 &#x3bc;m to 50 &#x3bc;m.

Semiconductor device and head lamp comprising same

Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.

Semiconductor device and semiconductor device package comprising same

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

Semiconductor device and semiconductor device package including same

An embodiment of the present invention includes: a gallium nitride substrate; and a light-emitting structure disposed on the other surface of the substrate, wherein the substrate includes a plurality of light extraction structures formed on one surface thereof, the thickness of the substrate is 80 &#x3bc;m or more, and the average height of the plurality of light extraction structures is 10 &#x3bc;m or more.

Light emitting device

Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.

Light emitting device having gallium nitrade substrate

A light emitting device includes a body having a cavity and a step difference structure around the cavity, a plurality of electrodes in the cavity, a light emitting chip in the cavity, a transparent window having an outer portion provided on the step difference structure to cover the cavity, and an adhesive member between the transparent window and the body. The adhesive member includes a first adhesive member between an outer bottom surface of the transparent window and a bottom of the step difference structure and a second adhesive member between the outer portion of the transparent window and the body.

Light emitting device with packaging having an adhesive in a groove for attaching a transparent cover

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer; a first electrode pad on the first conductive semiconductor layer; a second electrode pad on the second conductive semiconductor layer; and a current blocking pattern overlapping an edge of at least one of the first and second electrode pads.

Light emitting device and light emitting device package

A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MAlalloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.

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Seoul, South Korea

Ki Man Kang