Industry-University Cooperation Foundation Hanyang University

Ki Lim Han

Seungmin Lee

Jonguk Bae

Juheyuck Baeck

Jin Seong Park

Kyung Chul Ock

Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)&#x2dc;2.6 at %.

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Seoul, South Korea

Ki Lim Han