Dongbu Hitek Co., Ltd.

Skhynix Inc.

Ki Jun Yun

Ki Hong Lee

In Su Park

Oh Jin Jung

Seong Hun Jeong

Sang Wook Ryu

Sang Il Hwang

Chung Kyung Jung

Sung Wook Joo

A method of manufacturing a semiconductor device includes forming a first etch stop pattern on a lower structure including a first region and a second region to expose the second region, stacking a plurality of stack structures on the lower structure to overlap the second region and the first etch stop pattern, forming a stepped stack structure by etching the plurality of stack structures to expose an end portion of the first etch stop pattern, forming a slit passing through the stepped stack structure and the first etch stop pattern, and replacing sacrificial layers of the plurality of stack structures and the first etch stop pattern with conductive patterns through the slit.

Manufacturing method of a semiconductor device

A method for manufacturing a semiconductor device includes forming a lower electrode pattern on a substrate, forming a first insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first insulating layer, forming an etch blocking spacer at a side of the upper electrode pattern, forming a second insulating layer on the upper electrode pattern, etching the second insulating layer to form a cavity which exposes the etch blocking spacer, and forming a contact ball in the cavity.

Semiconductor device and method for manufacturing the same

Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.

A method of forming a contact includes forming an inter-layer dielectric layer to cover a gate formed on a semiconductor substrate; and forming a first hole which passes through the inter-layer dielectric layer to expose the gate, a second hole which exposes an active region of the semiconductor substrate, and a third hole which exposes the semiconductor substrate at a preset depth. Further, the method includes forming a shielding layer on the semiconductor substrate including the bottom and sidewalls of the first hole, the second hole, and the third hole; and removing the shielding layer at the bottom of the first hole and the second hole to expose the gate and the active region. Furthermore, the method includes filling the first hole, the second hole, and the third hole with a conductive material.

Method of forming contact and semiconductor device manufactured by using the method

A method of manufacturing a semiconductor device including at least one of the following steps: () Forming a plurality of lower electrodes over a substrate. () Forming a first stop film over the lower electrodes. () Forming a filling layer over the first stop film. () Forming a second stop film over the filling layer. () Forming a first interlayer insulating layer over the second stop film. () Forming a plurality of upper electrodes over the first interlayer insulating layer. () Forming a second interlayer insulating layer over the upper electrodes. () Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. () Forming a contact ball in the cavity.

An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower interconnection and a second lower interconnection over a dielectric of a substrate. The first lower electrode, the photodiode, and the upper electrode may be sequentially formed over the first lower interconnection. The second lower electrode may comprise a passivation layer over the second lower interconnection. The upper interconnection may be formed over the second lower electrode and electrically connected to the upper electrode.

Image sensor and method for manufacturing the same

A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on the substrate, the ONO layer and the polysilicon gates, and a low temperature oxide layer and polysilicon sidewall spacers on outer side surfaces of the polysilicon gates, except in a region between nearest adjacent polysilicon gates.

Flash memory device and method of fabricating the same

Provided is a method for manufacturing an image sensor. The method includes the following. A color filter layer is formed on a semiconductor substrate having a photodiode and a transistor formed thereon. A planarization layer is formed on the color filter layer. An LTO (Low Temperature Oxide) layer is formed on the planarization layer. A photoresist pattern is formed to correspond to the color filter layer on the LTO layer, and a reflow process is performed. A microlens array is formed by reactive ion etching the photoresist pattern and the LTO layer. A second reflow process may be performed on the photoresist pattern and/or the LTO layer during the reactive ion etching process.

Growing community of inventors

Yongin-si, South Korea

Ki Jun Yun