Samsung Electronics Co., Ltd.

Ki-Hyun Chyun

Jong-Hwa Lee

Chan-Hoon Park

Jeong-Hee Cho

Hyun-Tae Kang

Jang-Hoon Kim

A method for measuring critical dimensions of a pattern using an overlay measuring apparatus is provided. The method includes setting a first scan range, inputting a step pitch for the overlay measuring apparatus, inputting X and Y coordinates of a point on a reticle, and inputting a size of the reference pattern. The method further includes inputting a position of the reference pattern, inputting a second scan range, measuring the size of the reference pattern, and inputting an ideal pattern size. The method still further includes measuring a size and a first Z-axial focus position of a top region of the reference pattern, storing the first Z-axial focus position, measuring a size of the selected pattern of the first wafer using stored reference information, and determining whether the size of the selected pattern is suitable relative to the ideal pattern size.

Method for measuring critical dimensions of a pattern using an overlay measuring apparatus

A chemical solution dispensing device adapted for use with photo spinner equipment is disclosed. The device includes a nozzle adapted to spray chemical solution onto a wafer, a pressure sensor associated with the nozzle and adapted to sense a spraying pressure and generate a pressure value corresponding to the sensed spraying pressure, and a controller adapted to receive the pressure value, compare the received pressure value to a predetermined threshold pressure value, and generate an interlock signal when the received pressure value exceeds the predetermined threshold pressure value.

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Suwon-si, South Korea

Ki-Hyun Chyun