Samsung Electronics Co., Ltd.

Ki-huem Nam

Hyun Joo Han

Sun-woo Kawk

Jin-oh Choi

An elevator system automatically adjusts the inclination of a wafer boat during the manufacturing of semiconductor devices so that the wafers in the boat are maintained horizontal during their processing. The elevator system includes the wafer boat, a base on which the boat is supported, an elevator for loading the boat into a processing chamber and removing it from the chamber, a sensing unit for detecting the inclination of the boat relative to the horizontal, a horizontal control unit which is interposed between the base and the elevator and is drivable to maintain the boat in such a position that the wafers in the boat lie in horizontal planes, and a control unit for receiving information from the sensing unit and, based on the information, outputting a control signal to the horizontal control unit.

Elevator system for transferring a wafer boat with automatic horizontal attitude control

A method of forming a capacitor of semiconductor devices, and the capacitor formed thereby, improves the reliability of semiconductor devices by maximizing the capacitance of the capacitor through the stable increase of the surface area of its lower electrode material layer. The method includes: a) forming insulating layers with an oxide film placed on the top in sequence on a semiconductor substrate with a pattern formed thereon, and removing a predetermined portion of the insulating layers so as to form a contact hole; b) forming a lower electrode material layer of a capacitor on the oxide film over the semiconductor substrate containing the contact hole; c) removing the lower electrode material layer so as to expose a certain portion of the oxide film; d) undercutting the oxide film exposed by the removing of the lower electrode material layer; e) cleaning the surface containing the lower surface of the lower electrode material layer exposed by the undercutting of the oxide film; and f) carrying out a hemispherical grain (HSG) process in order to increase the surface area containing the lower surface of the lower electrode material layer exposed by the undercutting of the oxide film. The resultant capacitor has a lower surface of a lower electrode having a hemispherical shape.

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Kyungki-do, South Korea

Ki-huem Nam