Samsung Electronics Co., Ltd.

Ki Hoon Jang

Boun Yoon

Byoungho Kwon

Bo Un Yoon

Sangkyun Kim

Kichul Park

Inkwon Kim

Youngbeom Pyon

Hyo-Jung Kim

Hyo Jung Kim

Ki-Woong Kim

Chung Ki Min

Byoung Ho Kwon

Kieun Seo

Ye Hwan Kim

Dong Hoon Kwon

A method for fabricating a semiconductor device includes providing a polishing pad which includes a first region and a second region separated from each other by a fence, loading a wafer onto the first region, providing a slurry solution onto the first region, providing an ultrapure water onto the second region, turning the polishing pad to polish a surface of the wafer, and unloading the wafer from the polishing pad after polishing on the surface of the wafer is completed, wherein the fence includes a first fence extending from a center of the polishing pad toward an edge of the polishing pad in a first horizontal direction, and a second fence extending from the center of the polishing pad toward the edge of the polishing pad in a second horizontal direction different from the first horizontal direction.

Apparatus for polishing a wafer and method for fabricating a semiconductor device using the same

A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.

Method of manufacturing a semiconductor device

A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

Method of fabricating semiconductor device

Semiconductor device and method of fabricating the same

A method of fabricating a three-dimensional semiconductor device is provided. The method includes providing a substrate with a peripheral circuit region and a cell array region; forming a peripheral structure on the peripheral circuit region, and forming an electrode structure on the cell array region. The electrode structure includes a lower electrode, a lower insulating planarized layer on the lower electrode, and upper electrodes and upper insulating layers vertically and alternatingly stacked on the lower insulating planarized layer, and the lower insulating planarized layer may be extended to cover the peripheral structure on the peripheral circuit region. An upper insulating planarized layer is formed to cover the electrode structure and the lower insulating planarized layer on the peripheral circuit region.

Methods of fabricating three-dimensional semiconductor devices

A clothes washing machine for washing clothes in boiling water comprises a tub enclosing a wash tank. The tub has an upstanding wall with a rim. A cover for the tub includes inner and outer downwardly projecting flanges forming a groove extending continuously around the periphery of the cover to prevent the escape of steam. The rim of the tub is tightly received in the groove. A water infeed line for the tub includes an enlarged chamber for relieving the pressure of incoming water to provide a smooth inflow of water.

Boiling-water clothes washing machine

Growing community of inventors

Hwaseong-si, South Korea

Ki Hoon Jang