Samsung Electronics Co., Ltd.

Sap Ag

Ktfreetel Co., Ltd

Ki-Hong Kim

Byeong-Hoon Lee

Sun-kwon Kim

Chul-yong Cho

Sang-Yong Park

Jang-Ho Kim

Seung-Won Lee

Tae-Yeon Won

Sang Kyun Cha

Keun-joo Kwon

Jung-Yun Won

Nyun-Tae Kim

Sang-jun Choi

Sang-Bom Kang

Jin-bum Kim

Sung-Jin Ann

Sang-Young Lee

Jung-Ho Park

Young-Pil Kim

Tae-Seok Oh

Kwan-heum Lee

Hwi-Taek Chung

Woo-sung Jeon

Wook-Je Kim

Min-Gu Kang

Won-je Park

Ju-Won Cho

Chee-hwan Yang

Min-Soo Kang

Hyung-Ik Lee

Young-eal Kim

Soon-Wook Jung

Woo-young Yang

In-sun Jung

Shu-Jiang Wang

Jeong-Hoon Bae

Mi-jeong Kim

Byung-Ik Ahn

Hyuck-Jun Cho

Hyoun-min Baek

In-Sun Jung

Min-ja Han

Je-Sang Lee

Kimio Ueda

Seong-yong Park

Yong-Pyo Kim

Monitor

Provided are a user authentication method and an electronic device performing the method. The method is performed under the control of a processor and includes inputting a user authentication request for identifying a user, generating random number data that corresponds to knowledge-based authentication information in the user authentication request, generating an authentication code by combining biometrics-based authentication information in the user authentication request and the random number data, and processing the user authentication request based on the authentication code.

User authentication method and electronic device performing user authentication

Television receiver

Television stand

A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Transistor and method of operating same

A semiconductor device and a method of manufacturing a semiconductor device are provided. In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An epitaxial layer is formed on a top surface of the substrate adjacent to the gate structure. An elevated source/drain (ESD) layer and an impurity region are formed by implanting impurities and carbon in the epitaxial layer and an upper portion of the substrate using the gate structure as an ion implantation mask. A metal silicide layer is formed on the ESD layer.

Methods of manufacturing semiconductor devices

A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

Method of fabricating semiconductor device including a recessed channel

Growing community of inventors

Suwon-si, South Korea

Ki-Hong Kim