Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Ki Ho Park

Suk Ho Yoon

Ki Sung Kim

Jong Hyun Lee

Chul Min Kim

Jung Hyun Lee

Soo Min Lee

Sang Heon Han

Bum Joon Kim

Si Hyuk Lee

Joong Kon Son

Jae Sung Hyun

Jong Sun Maeng

Hyun Seok Ryu

Oleg Ledyaev

Tae Hyun Lee

Boung Kyun Kim

There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.

Semiconductor light emitting device

There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Method of manufacturing semiconductor light emitting device

A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Method for manufacturing semiconductor light emitting device allowing for recycling of semiconductor growth substrate

There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

Nitride semiconductor device

A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

Method of growing III group nitride single crystal and III group nitride single crystal manufactured by using the same

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Gyeonggi-do, South Korea

Ki Ho Park