Samsung Electronics Co., Ltd.

Ki-Ho Bae

Kyung-Hyun Kim

Jong-Heun Lim

Ki-Jong Park

In-Kwon Kim

Tae-Hyun Kim

Suk-Hun Choi

Hyo-Jung Kim

Kyung-tae Nam

Jun-ho Jeong

Yi-Koan Hong

Chan-wook Seo

Young-beom Pyon

A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.

Chemical mechanical polishing machine and polishing head assembly

According to example embodiments of inventive concepts, a non-volatile memory device includes a substrate including a second impurity region crossing a first impurity region, and channel regions extending in a vertical direction on the substrate. Gate electrodes may be separated from each other in a vertical direction and a horizontal direction along outer walls of the channel regions. A first insulating interlayer may be on the gate electrodes and the channel regions, where the first insulating interlayer defines a contact hole between at least one adjacent pair gate electrodes and a contact plug is formed in the contact hole to be electrically connected to the second impurity region. An etch stop layer pattern may be on the contact plug and the first insulating interlayer.

Non-volatile memory device including etch stop layer pattern

A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.

Semiconductor device having a conductive structure including oxide and non oxide portions

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Seoul, South Korea

Ki-Ho Bae