Samsung Electronics Co., Ltd.

Ki-heum Nam

Gyu-hwan Kwag

Hyun Joo Han

Yang-koo Lee

Ji-hoon Hong

A semiconductor device fabrication apparatus is provided for increasing the deposition rate of a film. The apparatus includes a process tube. Process gas injection portions in a slit configuration and waste gas exhaust portions formed as holes are integrated into the interior of the body of the process tube.

Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device

A diffusion system for manufacturing semiconductor devices has an air curtain formed across a furnace opening for preventing the loss of heat energy from inside the furnace. The diffusion system includes the furnace having an opening through which a wafer boat having a plurality of wafers is loaded/unloaded; an air curtain apparatus for spraying a gas across the opening so as to form an air curtain cutting off the atmosphere inside of the furnace from the outside environment; and a controlling unit for controlling the air curtain apparatus by applying on/off signals to the air curtain apparatus. The diffusion system is controlled by the controlling unit so as to form the air curtain at the opening of the furnace while the wafer boat moves in and out of the furnace. After the wafer boat is completely loaded into the furnace, the air curtain is removed.

Diffusion system having air curtain formation function for manufacturing semiconductor devices and method of controlling the same

A boat for semiconductor wafers has reduced contact surface area with the wafer, thereby preventing distortion of the wafer during heating. The boat has an upper member; a lower member, a plurality of wafers being loaded between the upper member and the lower member; and a plurality of support members vertically extended between and connecting the upper member to the lower member for supporting the wafers. A plurality of slots are successively and horizontally formed in each of the support members, and the peripheral edge of the wafer is inserted therein, wherein a hemisphere-shaped protrusion is formed inside the slot, and the bottom surface of the wafer contacts and is supported by each hemisphere-shaped protrusion at a single contact point.

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Suwon, South Korea

Ki-heum Nam