Samsung Electronics Co., Ltd.

Ki Chul Kim

Nae-in Lee

Geum-Jong Bae

Sang Su Kim

Sung-Ho Kim

Jin-Hee Kim

In-Wook Cho

Kwang-Wook Koh

Jae Hee Lee

Hwa Sung Rhee

Eun Ha Lee

Han Mei Choi

Jung Yun Won

Bong Jin Kuh

Yong Hun Lee

Pyung Moon

Sung Ho Kang

Un Ki Kim

Hang Mook Park

Yong Seok Song

Je Hoon Oh

A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.

Plasma monitoring device

A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation &#x3c;110&#x3e; and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation &#x3c;010&#x3e;.

Semiconductor devices and methods of manufacturing the same

A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.

Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

A notched gate SONOS transistor includes: a substrate having source/drain regions; a gate insulator layer on the substrate between the source/drain regions; a notched gate structure, on the gate insulator leyer, having at least one notch; and at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.

Flash memory having local SONOS structure using notched gate and manufacturing method thereof

Growing community of inventors

Suwon, South Korea

Ki Chul Kim