Samsung Electronics Co., Ltd.

Coway Co., Ltd

Woongjin Coway Co., Ltd

Other

Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

University of Seoul Industry Cooperation Foundation

Techno Semichem Co., Ltd.

Ki-chul Kim

Geum-jong Bae

In-Wook Cho

Han-Mei Choi

Jin-Hee Kim

Sung-Tae Kim

Sang-Su Kim

Jae-Soon Lim

Nae-in Lee

Byoung-jin Lee

Sung-Ho Kim

Bong-jin Kuh

Young-sun Kim

Jong-Cheol Lee

In-Seok Seo

Joung-Ho Son

Han-jin Lim

Geum-Jong Bae

Young-Sun Kim

Gab-Jin Nam

Kyu-Ho Cho

Dong-Suk Shin

Seung-Hwan Lee

Hong-Jae Shin

Young-wook Park

Kyu-Hee Han

Jin-il Lee

Jin-Yong Kim

In-Sung Park

Se-hoon Oh

Eun-ha Lee

Hyok-Ki Kwon

Seung-Han Lee

Kwang-Wook Koh

Sung-Worl Jin

Jeong-hee Chung

Jong-sung Lim

Jung-Hun Seo

Jin-Kyu Joung

Young-joon Moon

Seo-woo Nam

Man-Uk Park

Young-cheon Jeong

Joong-han Shin

Ji-Hye Jeong

Han-nam Kim

Byou-ree Lim

Jae-ouk Choo

You-Shin Kim

Ho Young Lee

Ji-Eun Lee

Jai-kwang Shin

Sun-Young Lee

Ho-jung Kim

Jung-Hyun Lee

Cha-young Yoo

Sang-Hoon Ahn

Jae-hyoung Choi

Jung-Min Oh

Yong-Kuk Jeong

Yong-Suk Tak

Ki-Vin Im

Youn-soo Kim

Wan-don Kim

Hanmei Choi

Hong-bae Park

Jong-Min Baek

Tae-Gon Kim

Cha-Young Yoo

Yun-Jung Lee

Taegon Kim

Byung-Soo Kim

Ki-yeon Park

Kwang-Hee Lee

Jung-hee Chung

Bong-hyun Kim

Wan-Don Kim

Oh-seong Kwon

Hyun-sik Choi

Je-Woo Han

Gyung-Jin Min

Hyung-su Jeong

Suk-Jin Chung

Bongjin Kuh

Kyoung-Seok Kim

Jeon-Il Lee

Jong-Hoon Kang

Jai-Dong Lee

Hoon-Sang Choi

Woo-Kyung You

Sang-su Kim

Jeong-sik Choi

Jin-hee Kim

Jun-ho Yoon

Sang-Ryol Yang

Jung-Yun Won

Jae-Sun Jung

Sang-Ho Rha

Sang-Yoon Woo

Sung-ho Kang

An electronic apparatus is provided. The electronic apparatus includes a camera, a storage, and a processor configured to store an image photographed by the camera and metadata of the image in the storage, the processor is further configured to identify whether first information related to the image is obtainable, based on the first information not being obtainable, generate metadata related to the first information based on second information, and store the generated metadata as metadata of the image.

Electronic apparatus and control method thereof

A laser annealing apparatus includes a laser oscillating structure, an oscillator, a beam expanding telescope, a first power meter, and a second power meter. The laser oscillating structure emits a first laser beam of a first wavelength and first beam cross-section to a substrate in a chamber including an optical window. The oscillator emits a second laser beam, of a second wavelength different from the first wavelength, to the substrate. The beam expanding telescope is on an optical path for the second laser beam and expands the second laser beam to a second beam cross-section. The first and second power meters measure energy of the second laser beam and a third laser beam, generated as the second laser beam is reflected by the substrate. The first beam cross-section and the second beam cross-section may be equal.

Laser annealing apparatus for semiconductors having multiple laser energy measuring means

A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

Gas injection apparatus and thin film deposition equipment including the same

A valve control system may include a latch valve controlling a stream of water in a pipe; a flow rate sensor measuring a flow rate in the pipe; and a valve control device determining that the latch valve is malfunctioning if a flow rate value measured by the flow rate sensor is not within a pre-set flow rate value range corresponding to a valve operation and controlling the latch valve to re-operate in the occurrence of the malfunction, wherein the valve control device may include a first timing device determining the number of re-operations of the latch valve, and wherein when the number of re-operations of the latch valve determined by the first timing device exceeds a pre-set number, the valve control device may control the latch valve to perform a reverse operation of the operation performed during the re-operations.

Valve control system, bidet using the same, and valve control method

Provided is a method for sterilizing a water treatment apparatus having a plurality of tanks. The method includes, performing a sterilization preparation process to drain purified water from the first tank until a first amount of purified water is left, performing a sterilizing process to sterilize the first tank by supplying the sterilized water supplied from the sterilizing module, to drain water from the first tank through a first water outlet pipe until a second amount of water is left in the first tank, and to drain the second amount of water remaining in the first tank into the second tank through a second water outlet pipe.

Method for sterilizing water treatment apparatus having plurality of tanks

A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.

Method for preparing hydrogen plasma annealing treatment, method for performing hydrogen plasma annealing treatment, and apparatus therefor

An automatic extraction device may include a displacement measuring unit for measuring the distance to a container by transmitting a measurement signal and then generating the measurement value which corresponds to the distance to the container; a control unit for outputting a water extraction signal if the measurement value is included within the predetermined target distance range and if the measurement value is not changed during the predetermined reference time; and a water extraction cock for supplying fluid to the container by opening a water extraction valve if the water discharge signal is input.

Automatic extraction device and method for controlling automatic extraction

A semiconductor device according to example embodiments may include a substrate having an NMOS area and a PMOS area, isolation regions and well regions formed in the substrate, gate patterns formed on the substrate between the isolation regions, source/drain regions formed in the substrate between the gate patterns and the isolation regions, source/drain silicide regions formed in the source/drain regions, a tensile stress layer formed on the NMOS area, and a compressive stress layer formed on the PMOS area, wherein the tensile stress layer and compressive stress layer may overlap at a boundary region of the NMOS area and the PMOS area. The semiconductor devices according to example embodiments and methods of manufacturing the same may increase the stress effect on the active region while reducing or preventing surface damage to the active region.

Semiconductor device having reduced-damage active region and method of manufacturing the same

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.

Semiconductor device and method of fabricating the same

A generator includes: an upper housing and a lower housing; a water inlet and a water outlet provided in the upper housing; an impeller rotatably fixed inside the upper housing; a magnet provided in the lower housing, connected to a rotating shaft of the impeller, and rotated integrally with the impeller; and a bobbin positioned outside the magnet. A bearing through which the rotating shaft passes and a communication hole connecting a space for housing the impeller to a space for housing the magnet are disposed in an intermediate surface between the space for housing the impeller and the space for housing the magnet.

Generator and bidet comprising the same

A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Methods of forming wiring structures

A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation &#x3c;110&#x3e; and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation &#x3c;010&#x3e;.

Semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Ki-chul Kim